MD6001 Search Results

MD6003

Abstract: MD6003F MD6001
Contextual Info: MOTORCLA SC XSTRS/R F 15E 0 I b3b7254 0G0bSS3 S | r-Ä 7 -Ä 7 M AXIM U M RATINGS MD6001.F MD6003 MD6002,F Sym bol MD6003F M06001,2 Rating Unit Vdc Collector-Emitter Voltage VcEO Collector-Base Voltage VCBO Emitter-Base Voltage V e BO 5.0 Vdc lc 500 mAdc Collector Current — Continuous

MD6002

Abstract: MD6003 MD6001 MD6001F MD6003F MQ6001 MQ6002 LB-216 VRP11
Contextual Info: MD6001, F silicon MD6002, F MD6003, F MQ6001, MQ6002 M U L T IP L E SI LIC O N A N N U L A R T R A N S IS T O R S NPN, PNP SIL IC O N M U L T IP L E T R A N S IS T O R S . . designed for use as differential amplifiers, dual general*purpose switches and amplifiers, front end detectors, and temperature

MD8003

Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

21x21

Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
Contextual Info: 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］のダイアログ・ボックスが表示されます。 3. 検索したいパッケージのNECコードを入力して， 検索 F をクリックしてください。

dip 28

Abstract: "lead material" DIP
Contextual Info: TUBE CONTAINER UNIT : mm 8.6 15.5 18.3 11.2 MD600-1A 22.4 MD600-2A Length : 501±2.0 +0.3 Thickness : 0.7−0.2 Tolerance : ±0.4 Material : Plastic With Antistatic Finish Applied Package Quantity(pcs) 24-Pin Plastic DIP MAX. 14 28-Pin Plastic DIP MAX. 12

p42c

Abstract: SC-551-42 h 033 0007R P42C-70-600B-1
Contextual Info: Packing Name Magazine MD600-1A MD600-2A 42 pin Shrink DIP 600 mil 42 22 1 21 A K I L J F D C N R M M H B G NOTES 1) Each lead centerline is located within 0.17 mm (0.007 inch) of its true position (T.P.) at maximum material condition. 2) Item "K" to center of leads when formed parallel.

MD300-10A

Abstract: QFN tray tray datasheet bga SIP 400B TSOP TRAY 40 PIN BGA package tray 64 NEC A39A 240 TSOP package tray 6-tsop TRAY DIMENSIONS 132 PGA
Contextual Info: CHAPTER 4 CHAPTER 4 4.1 PACKING STYLES AND NOTES 4.1.1 Packing Styles 4.1.2 Notes on Handling 4.2 PACKING OF IC PACKAGES 4.2.1 List of Packing 1 DIP (2) SIP, V-DIP, ZIP (3) QUIP, Piggyback (4) PGA (5) SOP, SSOP (6) TSOP (I) (II) (7) QFP, QFP (FP) (8) SVP

Contextual Info: Packing Name Magazine MD-600-1A 42 pin Shrink DIP 600 mil 42 22 1 21 A K J I H L C F M D G N M NOTES 1) Each lead centerline is located within 0.18 mm (0.007 inch) of its true position (T.P.) at maximum material condition. 2) Item "K" to center of leads when formed parallel.

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

h 033

Abstract: SC-552-48
Contextual Info: Packing Magazine Name MD600-1A MD600-2A 48 pin Shrink DIP 600 mil 48 25 1 24 A K L I J H G F D C N M NOTES 1) Each lead centerline is located within 0.17 mm (0.007 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel.

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

NEC A39A

Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Contextual Info: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES

MJ1005

Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

P42C-100-600A

Contextual Info: Packing Name SC-600-1P Magazine MD600-1A MD600-2A 42 pin DIP 600 mil 42 22 1 21 A K L I J H M G D R C F N M NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel.

Contextual Info: Packing Name SC-600-1P Magazine MD600-1A MD600-2A 24 pin DIP 600 mil 24 13 1 12 A K I L J H F C G D N M B NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) Item "K" to center of leads when formed parallel.

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

DIP10

Abstract: MD600-1A
Contextual Info: Unit : mm 8.6 15.5 18.3 11.2 MD600-1A 22.4 MD600-2A Length : 500±2.0 +0.3 Thickness : 0.7−2.0 Tolerance : ±0.4 Material : Plastic With Antistatic Finish Applied Package Quantity(pcs) 24-Pin Plastic DIP 14 28-Pin Plastic DIP 12 42-Pin Plastic DIP 8 42-Pin Plastic Shrinked DIP