MDT10P621N Search Results

MDT10P621N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mdt10p621 Contextual Info: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high	Original	MDT10P621N 16-bit oMDT10P621N 4Kx14 MDT10P621N) 192X8 mdt10p621	PDF
20MHZ Abstract: 100nnn Contextual Info: MDT10P621N AB 1. 概述－TMR0，TMR1，TMR2 时钟这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。－PORTB＜7：4＞电平变化中断	Original	MDT10P621N PORTB74 MDT10P621N 20MHZ 200ns 4Kx14 MDT10P621N) 192X8 20MHZ 100nnn	PDF

Catalog Datasheet

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mdt10p621

Contextual Info: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high

Original

MDT10P621N 16-bit oMDT10P621N 4Kx14 MDT10P621N) 192X8 mdt10p621

PDF

20MHZ

Abstract: 100nnn
Contextual Info: MDT10P621N AB 1. 概述－TMR0，TMR1，TMR2 时钟这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功耗和抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。－PORTB＜7：4＞电平变化中断

Original

MDT10P621N PORTB74 MDT10P621N 20MHZ 200ns 4Kx14 MDT10P621N) 192X8 20MHZ 100nnn

PDF