ME20 Search Results

ME20

Abstract: BCW29R BSV52R ME17 ME18 ME19 ME29 ME30 ME31 ME32
Contextual Info: Micro-Devices Microtab Transistors and Diodes for Miniature Circuit Assemblies Type B F S 17R B F S 18R B F S 19R B F S 20R BCW 29R BCW 30R BCW 31 R BCW 32 R BCW 33 R B SV 5 2 R BAW 56 1 Maxim um ratings_ NKT equiv. Polarity ME17 ME18 ME19 ME20 ME29

2021-1G

Abstract: ME2021-1G
Contextual Info: 2021-1G ME2021-1G LED BACKLIGHT FOR LCD DISPLAY ABSOLUTE MAXIMUM RATINGS Forward Current Reverse Voltage Operating Temperature Storage Temperature 420mA 10V -20 to +70°C -30 to +80°C If Vr T,opr T stg ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER

Contextual Info: ME200SE Series Low Cost, 2W Ultra-Miniature SIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

Contextual Info: CRO 2021-1G {ME2021-1G LED BACKLIGHT FOR LCD DISPLAY ABSOLUTE MAXIMUM RATINGS Forward Current Reverse Voltage Operating Temperature Storage Temperature 420mA 10V -20 to +70°C -30 to +80°C If Vr Topr Tstg ELECTRO-OPTICAL CHARACTERISTICS Ta=25°C) PARAIVOETER

KT 907

Abstract: ic 565 circuit diagram IR 907 2021-1G ME2021-1G
Contextual Info: CRO 2021-lG ME202I-IG LED BACKLIGHT FOR LCD DISPLAY ABSOLUTE MAXIMUM RATINGS Forward Current Reverse Voltage Operating Temperature Storage Temperature 420mA 10V If Vr -20 to +7 0°C -30 to +80°C Topr Tstg ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAIVOETER

RAYTHEON

Abstract: RMPA39000
Contextual Info: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier Description Features The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs

TRANSISTOR SMD K23

Abstract: B DIN 5463
Contextual Info: User's Guide SLAU296 – October 2009 ADS54RF63-ADX4 Single-channel, 12-bit, 2.2 GSPS Evaluation Module EVM 1 2 3 4 5 6 7 8 9 10 Contents Introduction . 2

j452

Abstract: j451 transistor c331 j453 J456 c331 transistor ME20 U300 C302 diode c335
Contextual Info: UM10117 PIP212-12M demonstration board Rev. 03 — 15 February 2007 User manual Document information Info Content Keywords PIP212, demo board, evaluation board Abstract This document introduces and describes the features and operation of the PIP212-12M demonstration board.

RAYTHEON

Abstract: RMBA09500-58
Contextual Info: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and

"Noise Filter" tokin

Abstract: ME-205S1 ME-205S2 me z1
Contextual Info: Open Frame Open Frame ME Series For Harmonic Distortion Model Rated voltage VAC Rated current (A) ME-205S1 ME-205S2 125 250 3 1.5 High harmonic wave processing class Class D Class D Reactor (mH) 4 12 Shape and Dimensions Operating temperature range (°C)

TLO 61

Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

MA7805

Abstract: ME214 OC740
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

MMIC SWITCH

Abstract: RTPA5250-130
Contextual Info: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information

T2L fuse

Abstract: HD-234 HD-235 HD-534 HD-535 Logic PROBE diagram circuit 535 column driver
Contextual Info: nn HD-234/534 h a r r is \jQ fj Hex Interface Inverters HD-235/535 Hex Interface Drivers GENERAL DESCRIPTION Th e integrated circu its covered b y th is data sheet fo rm a part of H a rris' fam ily of M ilita ry and In d u stria l M o n o lit h ic Interface C ir­

T2L fuse

Abstract: HD-234 HD-235 HD-534 HD-535
Contextual Info: nn HD-234/534 h a r r is \jQ fj Hex Interface Inverters HD-235/535 Hex Interface Drivers GENERAL DESCRIPTION Th e integrated circu its covered b y th is data sheet fo rm a part of H a rris' fam ily of M ilita ry and In d u stria l M o n o lit h ic Interface C ir­

NEO-M8

Abstract: MEW031 SARA-G300 design HF radio modem
Contextual Info: Wireless Technologies GSM/UMTS/CDMA/LTE GPS/GLONASS/BEIDOU/GALILEO RFID Bluetooth ISM ZigBee Antennas & accessories www.microdis.net 1 no More Wires Microdis Electronics acts as a high-tech distributor for many years, collecting experience in wireless communication devices. We offer not only the latest technology

bfi optilas

Abstract: RAYTHEON OC768 RMLA00400
Contextual Info: RMLA00400 40 Gb/s Transimpedance Amplifier ADVANCED INFORMATION Description Features The Raytheon RMLA00400 is a very high speed Transimpedance Amplifier TIA MMIC for 40 Gb/s (OC768) fiber optic systems. It is available in die form, and is manufactured using Raytheon’s advanced MHEMT process. The

gcu 101 setting manual

Contextual Info: User's Manual The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7724 32 User’s Manual: Hardware Renesas 32-Bit RISC Microcomputer SH7780 Series R8A7724 Cover [Portions omitted in accordance with NDA]

CZ-182

Abstract: H1107
Contextual Info: 3000 Hanover Street Palo Alto, California 94304 Thank you for expressing interest in Hewlett-Packard's CMOS Image Sensors. These sensors are available directly from HP or through HP's nation-wide Component Group distribution partners and are priced to meet the needs of camera manufacturers.

RAYTHEON

Abstract: RMDA1840
Contextual Info: RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The

je 3055

Abstract: RAYTHEON RMWM38001 RMWP38001
Contextual Info: RMWM38001 38 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,

RAYTHEON

Abstract: Raytheon RF Components noise amplifier RMWL38001
Contextual Info: RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Description Features The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In

RAYTHEON

Abstract: RMWB33001
Contextual Info: RMWB33001 33 GHz Buffer Amplifier MMIC PRODUCT INFORMATION Description Features The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in the LO chain of point to point radios, point to multi- point communications, LMDS, and other millimeter wave applications. In

an 7073

Abstract: RAYTHEON Raytheon Company RMWW12001
Contextual Info: RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Description Features The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon