MEDIUM POWER TRANSISTORS Search Results

TBD438

Abstract: BD433 TBD436 TBD437 434 NPN transistors
Contextual Info: BD433, 434, 435, 436, 437, 438 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum

7333 A

Abstract: Power Transistors TO-126 Case farnell ic 901 BD437
Contextual Info: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C

Power Transistors TO-126 Case

Abstract: BD438 7333 A 9016 g farnell
Contextual Info: BD438 Medium Power Transistors General Purpose TO-126 Features: • PNP Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C

PCOT

Abstract: BCW67f BCW66 bss65 BSV62 BCW65A BCW65B BCW65C BCW66F BCW66G
Contextual Info: SOT-23 TABLE 2 -S IL IC O N PLANAR MEDIUM POWER TRANSISTORS Devices in this table are suitable for medium current, medium power sw itching and general purpose applications. Ratings and Characteristics at 25 °C ambient temperature. _ _ _ _ _ V /lavimnm □

TEA15xx-series

Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
Contextual Info: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

Medium Power Bipolar Transistors

Abstract: 2N5320 2N5322
Contextual Info: 2N5320, 2N5322 Series Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A. Up to 1W power dissipation. • Silicon power switching transistors. • Medium power amplifier and switching applications.

2N5322 2N5320

Abstract: 2N5320 2N5322 2N532
Contextual Info: 2N5320 & 2N5322 Medium Power Transistors Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. 2N5320 NPN

2SC2340

Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
Contextual Info: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

Contextual Info: SCS'THOMSON RfflDœiilLICTMDei STZT5550 STZT5551 MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciRCurrs . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL

Contextual Info: PNP Medium Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: • PNP Silicon Power Switching Transistors • Medium Power Amplifier and Switching Applications Absolute Maximum Ratings: Ta = 25°C unless otherwise specified

MJE350 b c e

Abstract: Power Transistors TO-126 Case MJE350
Contextual Info: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package

8805 VOLTAGE REGULATOR

Abstract: MJE350 b c e MJE350 pnp mje350
Contextual Info: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for

Contextual Info: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC141 BC140 BC140-16 bc141-16 BC141-10 BC140-10 BC140 equivalent BC141 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification NPN medium power transistors

2N6040

Abstract: 2N6045G 2N6043G 2N6040G 2N6042 2N6045 2N6042G 2N6041 2N6043 2N6044
Contextual Info: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching

Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •

BC161

Abstract: BC160-16 TRANSISTOR BC140 BC160 BC160 TRANSISTOR BC160-10 BC161-10 bc160-40 BC140 BC141
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC160; BC161 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification PNP medium power transistors

2N6045G

Abstract: 2N6040 2N6042 2N6045 2N6040G 2N6041 2N6043 2N6044 transistor marking T2
Contextual Info: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching

Contextual Info: STD724 NPN MEDIUM POWER TRANSISTORS Features • SURFACE MOUNTING DEVICE IN MEDIUM POWER DPAK POWER PACKAGE ■ AVAILABLE IN TAPE & REEL PACKING ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE 3 1 Applications ■ VOLTAGE REGULATION ■ RELAY DRIVER

BFY51

Abstract: transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN medium power transistors

D724

Abstract: JESD97 STD724 STD724T4
Contextual Info: STD724 NPN MEDIUM POWER TRANSISTORS Features • SURFACE MOUNTING DEVICE IN MEDIUM POWER DPAK POWER PACKAGE ■ AVAILABLE IN TAPE & REEL PACKING ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE 3 1 Applications ■ VOLTAGE REGULATION ■ RELAY DRIVER

Marking code AM

Contextual Info: DISCRETE SEMICONDUCTORS a ffi SHEET BCX51 ; BCX52; BCX53 PNP medium power transistors 1999 Apr 19 Product specification Supersedes data of 1997 Jul 04 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistors