2N532 Search Results

2N5322 2N5320

Abstract: pnp 500ma 40v pnp 500ma - 40v 500ma 40v pnp 2N5323 NPN, PNP for 500ma, 30v Ic-500mA NPN for 500ma, 30v 2n5321
Contextual Info: 2N5320 2N5321 2N5322 2N5323 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process,

PNP Transistors

Abstract: "PNP Transistors"
Contextual Info: 2N5320 High Voltage Silicon Low Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Low Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N5320 VCBO 100 hFE 30 IC 500 Industry Type 2N5320 Visa & Mastercard Accepted! Notes

2N1724A

Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N5320

Abstract: 2N5321 2N5322 2N5323
Contextual Info: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . DESCRIPTION 0 .8 9 m a x .

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5323 Features • • • 10 Watts Power Dissipation. Metal can case. Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

2n5320 transistor

Abstract: 2N5320 transistor 2N5321 2N5323 pnp 500ma 40v 500ma 40v pnp Ic-500mA 2N5322 2N5320 2N5321 2N5322
Contextual Info: DATA SHEET 2N5320 2N5322 2N5321 2N5323 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching

2n5320

Abstract: 2N5320 MOTOROLA 2N5321 2N5321 MOTOROLA
Contextual Info: MOTORCLA SC 12E D I b3b?aSM 00flb434 Ö | XSTRS/R F 'T-3Ç- 'P 2N5320 2N5321 CASE 79-04, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Symbol Rating 2N5320 2N5321 U nit Collector-Emltter Voltage VcEO 75 50 Vdc Collector-Base Voltage VcBO 100 75 Vdc Emitter-Base Voltage

Contextual Info: 2N5328 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

2N5321

Abstract: 2N5320 2N5322 2N5323
Contextual Info: 2N5320 2N5321 MEDIUM-POWER AMPLIFIERS DESCRIPTION The 2N5320 and 2N5321 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.

2N5322

Abstract: 2N5323
Contextual Info: PNP 2N5322 – 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS

2N5322

Contextual Info: roducts., One., 'Is.iiz TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5320 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N5320 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case. It is

2N4211

Abstract: to63 2N3597 2N3598 2N3599 2N4210 2N5329 2N5539 2N5731 2N5732
Contextual Info: Device Type 2N3597 2N3598 2N3599 2N4210 2N4211 2N5329 2N5539 2N5731 2N5732 2N5957 2N5959 2N6046 2N6047 2N6048 SDT3201 SDT3202 SDT3203 SDT3204 SDT8002 SDT8003 SDT8012 SDT8013 SDT8015 SDT8016 SDT8045 SDT8070 SDT8071 SDT8751 SDT8753 SDT8754 SDT8755 SDT8756 SDT8757

2N5323

Contextual Info: 2N5323 General Purpose P-N-P Silicon Power Transistor. 4.00 Transisto. 1 of 1 Home Part Number: 2N5323 Online Store 2N5323 Diodes G eneral Purpo s e P- N-P Silic o n Po w er Trans is t o r. Transistors

2N5322

Abstract: 2N5323 2N5320 2N5321
Contextual Info: 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal

2n5320

Contextual Info: rZ 7 SGS-THOMSON Ä T# 2N5320 2N5321 [MO gfô l[L[iera®*S SMALL SIGNAL NPN TRANSISTORS . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MEDIUM POWER AMPLIFIER . PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal

2N5322

Abstract: 2N5323
Contextual Info: 2N5322 2N5323 MEDIUM-POWER AMPLIFIERS DESCRIPTION The 2N5322 and 2N5323 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5323 Features • • • 10 Watts Power Dissipation. Metal can case. Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5321 Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC

2N5320

Abstract: 2N5321 oc44 25000A
Contextual Info: 2N5320 2N5321 NPN SWITCHING TRANSISTORS M AXIMUM RATINGS RATINGS SYMBOL Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current — Continuous Total Device Dissipation @ Tc Derate Above 25°C = 25UC Operating & Storage Junction

2N6178

Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

Contextual Info: Back to Bipolar Small Signal 2N5322 2N5323 PNP SWITCHING TRANSISTORS MAXIMUM RATINGS RATINGS SYMBOL 2N5322 2N5323 Collector-Emitter Voltage 75 50 V ceo Collector-Base Voltage 100 75 VcBO Emitter-Base Voltage 7.0 5.0 V ebo Base Current 1.0 IB Collector Current - Continuous

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 • Low VCE sat , hFE 30-130 (@VCE=4V, IC=0.5A) • Hermetic TO-39 Metal package. • Ideally Suited For Medium Power Amplifier And Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

0057W

Abstract: BD PNP
Contextual Info: 3875081 G E S O L ID STATL 01 DE.1 3Ö7SQÖ1 0017154 0 ~W~ • _ I 7- - j 3 - D •- . Higli-Speed Power Transistors File Number 325 2N5320, 2N5321, 2N5322, 2N5323