MEV SEMICONDUCTOR Search Results

ADC08D1520WGFQV

Abstract: krad 5962F0520601VZC 748 amplifier national 748
Contextual Info: ADC08D1520WGFQV Dual Channel, 8-Bit, 1.5 GSPS Analog-to-Digital Converter with Latch-up Levels of 120 MeV and 300 krad Si Superior Single Event Latch-Up Levels of 120 MeV and 300 krad (Si) for Total Ionizing Dose at Only 1W per Channel, the Lowest Power in the Industry

Contextual Info: HCTS646MS Semiconductor Radiation Hardened Octal Bus Transceiver/Register, Three-State August 1995 Features • • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: HCS374MS Semiconductor September 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg

delay line ms-19

Abstract: 5962R0622601KXC SMRT2805S/KR
Contextual Info: Crane Aerospace & Electronics Power Solutions SMRT Single, Dual and Triple Space DC-DC Converters 19-56 Volt input – 35 Watt – Space qualified Features Radiation tolerant space dc-dc converter • Single event effects SEE LET performance to 86 MeV cm2/mg

IN50C

Abstract: QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
Contextual Info: April 29, 2013 Radiation Performance Data Package RHD5900, RHD5901, RHD5902 Rev 2.0 DLA SMD Number: 5962-10241 Quad operational amplifiers Radiation Hardened by Design ELDRS: CMOS Immune Total dose: > 1 Mrad Si SEL Immune >100 MeV-cm /mg Neutron Displacement Damage

Contextual Info: HCTS04MS Semiconductor Radiation Hardened Hex Inverter August 1995 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: HCTS163MS Semiconductor Radiation Hardened Synchronous Counter September 1995 Pinouts Features • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: Crane Aerospace & Electronics Power Solutions SMRT Single, Dual and Triple Space DC-DC Converters 19-56 Volt input – 35 Watt – Space qualified Features Radiation tolerant space dc-dc converter • Single event effects SEE LET performance to 86 MeV cm2/mg

Contextual Info: HCTS112MS Semiconductor RadiationHardened Dual JK Flip-Flop September 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T16 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: HCTS30MS Semiconductor Radiation Hardened 8-Input NAND Gate August 1995 Pinouts Features 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: HCTS160MS Semiconductor Radiation Hardened Synchronous Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10"9 Errors/Bit-Day

mevc

Abstract: 080L
Contextual Info: SENSITRON SEMICONDUCTOR SAF27N10-080L TECHNICAL DATA DATA SHEET 4272, REV. D RAD TOLERANT LOW RDS HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.08 Ohm, 27A MOSFET • Characterized at VGS of 6V • Total Dose Characterized to 300 Krad • Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET

Contextual Info: HCTS4002MS Semiconductor Radiation Hardened Dual 4-Input NOR Gate August 1995 Features Pinouts 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: HCTS20MS Semiconductor Radiation Hardened Dual 4-Input NAND Gate September 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-183S CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: Crane Aerospace & Electronics Power Solutions SMFL Single and Dual DC-DC Converters 28 Volt input – 65 Watt Features Radiation tolerant space dc-dc converter • Single event effects SEE LET performance to 86 MeV cm2/mg • Total ionizing dose (TID) guaranteed to 100 krad(Si)

Contextual Info: HCTS27MS Semiconductor Radiation Hardened Triple 3-Input NOR Gate September 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: SHF55N06-014 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4255, REV. B RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 60 Volt, 0.014 Ohm, 90A MOSFET current limited to 55A by package • Total Dose Characterized to 300 Krad • Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET

Contextual Info: HCS161MS Semiconductor Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

LGA 478 SOCKET PIN LAYOUT

Abstract: RTAX2000
Contextual Info: v5.2 RTAX-S/SL RadTolerant FPGAs Radiation Performance Leading-Edge Performance • • • • • • • • • • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg

RTAX2000

Abstract: rtax4000 CDB 455 C34 IO358 DIODE SMD V05 128X3
Contextual Info: v5.1 RTAX-S/SL RadTolerant FPGAs Radiation Performance Leading-Edge Performance • • • • • • • • • • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg

MIL-PRF-38535 appendix a

Abstract: RTAX2000S rtax250s diode smd f6 sl TDC 1809 cga 624 624-CCGA RTAX2000 ACTEL CCGA to FBGA Adapter RTAX1000S
Contextual Info: v5.4 RTAX-S/SL RadTolerant FPGAs Radiation Performance Leading-Edge Performance • • • • • • • • • • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg

Synplify tmr

Abstract: 2965A ACTEL CCGA 1152 mechanical RTAX2000 CGS624 A54SX16 TM-3015 CCGA RTAX1000S-SL rtax250s
Contextual Info: v5.3 RTAX-S/SL RadTolerant FPGAs Radiation Performance Leading-Edge Performance • • • • • • • • • • SEU-Hardened Registers Eliminate the Need for TripleModule Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeV-cm2/mg

HCS04D

Abstract: HCS04DMSR HCS04HMSR HCS04K HCS04KMSR HCS04MS
Contextual Info: HCS04MS Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: HCS02MS Semiconductor Radiation Hardened Quad 2-Input NOR Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg