MFQ1000 Search Results

MFQ1000 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MFQ1000 P/C		Motorola	European Master Selection Guide 1986		Scan	PDF

MFQ1000 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mosfet cross reference Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is	Original	PDF	T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	PDF	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
transistors BC 557C Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555 Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and	OCR Scan	PDF
md5000a Abstract: BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE110 IRFE111 IRFE113 IRFE9120 Text: MULTIPLE SMALL-SIGNAL TRANSISTORS continued QUAD TMOS FETS rds (ON) Devices (£2) Max VGS (H7) @ ID (A) Min V(BR)DSS IDSS (V) @ VDS Max (V) ID (m A) @ VDS (V) (UA) Max (V) Min @ ID (VA) CISS IGSS (nA) Max @ VGS (V) CRSS ton toff (pf) Max @ VDS (V) (P0 Max	OCR Scan	PDF	MFQ930 MFQ960 MFQ990 MFQ1000 MFQ6660 IRFE110 MD3251AF MD3467 MD3467F MD3725 md5000a BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE111 IRFE113 IRFE9120
MFQ1000C Abstract: B757T Text: M O T O RO L A SC XSTRS/R F 12E 0 I t3t?5SM Q U AD DUAL-IN-LINE N-CHANNEL EN H ANCEM EN T M O D E SILICON GATE TM O S FIELD EFFECT TRANSISTORS • Fast Sw itching S pee d — t0 n = toff = 10 ns M ax • L o w Drive R equirem ent, V e S th = 2.5 V M ax • Inherent Current Sharing Capability Perm its E asy Paralleling	OCR Scan	PDF