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    MFQ6660C

    Abstract: MFQ6660P
    Contextual Info: MOTOROLA SC XSTRS/R F 1ZE 0 I b3b75S4 QUAD DUAL-IN-LINE N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS FIELD EFFECT TRANSISTORS □Qfit. 75c? 3 I T Æ -2 5 MFQ6660C; P These TMOS Power FETs are designed fo r high current, high speed power switching applications such as switching power supplies, CMOS logic,


    OCR Scan     		b3b75S4 b3b72SM MFQ6660C, MFQ6660C MFQ6660P PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF