MG2140 Search Results

Contextual Info: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod­ uct family. Several arrays up to 700k cells cover all sys­ tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS

G2265E

Contextual Info: Temic MG2RT Semiconductors Radiation Tolerant 0.5-jim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured

36168

Contextual Info: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS

Contextual Info: MG2RT Radiation Tolerant 0.5–µm CMOS Sea–of–Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers

atmel 946

Abstract: X-TAL 20m atmel 422 AtMEL 624 ATMEL 634 OAI22 MG2044E MG2091E MG2140E MG2194E
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 700K Cells 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG

diode smd marking BUF

Abstract: qml-38535 5962-00B02
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA 00-06-08 Add case outlines 5, 6, 7 and 8. - tmh APPROVED Monica L. Poelking REV SHEET REV A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4

MG2044

Abstract: MG2091 MG2140 MG2194 MG2265 5962-00B02
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 700K Cells 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG

14020

Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Contextual Info: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.

32M DPRAM

Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
Contextual Info: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers

TRANSISTOR B737

Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
Contextual Info: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998

MG2000

Abstract: MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2
Contextual Info: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS 3/2, a 0.5 micron drawn, 3 metal layers

circuit diagram mg2

Abstract: star delta wiring diagram 3 phase using timer MG2044 MG2091 MG2140 MG2194 MG2265 MG2360 MG2480 land pattern 484 BGA
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 700k Cells 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimised for Synthesis, Floor Plan & Automatic Test Generation ATG

X-TAL 20m

Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to700K Cells 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimised for Synthesis, Floor Plan & Automatic Test Generation ATG

qml-38535

Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E MM0-G2091
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outlines 5, 6, 7 and 8. - tmh 00-06-08 Monica L. Poelking B Add device types 09 – 15. - tmh 00-07-26 Thomas M. Hess C Add die requirements and appendix A. – tmh 00-09-01 Monica L. Poelking D

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A