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Toshiba America Electronic Components MG25Q6ES50A SILICON N CHANNEL IGBT GTR MODULE Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
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MG25Q6ES50A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG25Q6ES50A		Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)		Scan	PDF

MG25Q6ES50A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Eupec BSM25GD120DN2E3224 Abstract: BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224 Text: MARKETING NEWS Datum: 2001-01-19 Seite 1 von 1 Document No.: MN2001-02 Dear colleagues, please be notified that Toshiba has withdrawn some products. To offer the costumer an exactly technical alternative solution or an matchable technical alternative we built up the following checklist.	Original	PDF	MN2001-02 MG15Q6ES50 BSM15GD120DN2E3224 MG15Q6ES50A BSM15GD120DN2 MG25Q6ES50 BSM25GD120DN2E3224 MG25Q6ES50A BSM25GD120DN2 MG50Q6ES50 Eupec BSM25GD120DN2E3224 BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224
Untitled Abstract: No abstract text available Text: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage	OCR Scan	PDF	MG25Q6ES50A MG25Q ES50A 961001EAA1
Untitled Abstract: No abstract text available Text: T O SH IB A TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE m . a^ ^7 ^r HIGH POWER SWITCHING APPLICATIONS nX SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage	OCR Scan	PDF	MG25Q6ES50A 961001EAA1
Untitled Abstract: No abstract text available Text: T O SH IB A MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fi^ n fiF ^ R n A • Mr lap ta «v v m ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.	OCR Scan	PDF	MG25Q6ES50A 961001EAA1 TjS125Â
Untitled Abstract: No abstract text available Text: TOSHIBA MG25Q6ES50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0 .3 ^ 3 Max. Inductive Load • Low Saturation Voltage ; V CE (sat) = 3-OV (Max.)	OCR Scan	PDF	MG25Q6ES50A 961001EAA1 --10V
MG25Q6ES50A Abstract: P channel 1200v 25a IGBT Text: TOSHIBA MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT	OCR Scan	PDF	MG25Q6ES50A 2-108E2A 961001EAA1 VGE--10V 10//s MG25Q6ES50A P channel 1200v 25a IGBT