MG25Q6ES50A Search Results

Contextual Info: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE m . a^ ^7 ^r HIGH POWER SWITCHING APPLICATIONS nX SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fi^ n fiF ^ R n A • Mr lap ta «v v m ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: TOSHIBA MG25Q6ES50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0 .3 ^ 3 Max. Inductive Load • Low Saturation Voltage ; V CE (sat) = 3-OV (Max.)

MG25Q6ES50A

Abstract: P channel 1200v 25a IGBT
Contextual Info: TOSHIBA MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Eupec BSM25GD120DN2E3224

Abstract: BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224
Contextual Info: MARKETING NEWS Datum: 2001-01-19 Seite 1 von 1 Document No.: MN2001-02 Dear colleagues, please be notified that Toshiba has withdrawn some products. To offer the costumer an exactly technical alternative solution or an matchable technical alternative we built up the following checklist.