MG300Q2 Search Results

Tag 676 800

Contextual Info: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •

Contextual Info: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)

MG300Q2YS50

Abstract: 300AT
Contextual Info: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage

Contextual Info: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

MG300Q2YS61

Abstract: toshiba G2 MG300Q2YS
Contextual Info: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)

MG300Q2YS61

Abstract: MG300Q2YS
Contextual Info: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)

Contextual Info: T O S H IB A MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 /«s Max. Inductive Load • Low Saturation Voltage

MG300Q2YS65H

Contextual Info: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

MG300Q2YS60A

Contextual Info: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

Contextual Info: MG300Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 300 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA

Contextual Info: T O S H IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTRO L APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage

jSw Diode

Contextual Info: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

Contextual Info: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

MG300Q2YS50

Contextual Info: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)

MG300Q2YS50

Abstract: 2-109C1A
Contextual Info: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

YS40

Abstract: MG300Q2YS40 MG300Q2YS MG300Q
Contextual Info: TOSHIBA MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2 YS40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed EQUIVALENT CIRCUIT : tf= O.ô^s Max. trr —0.5/43 (Max.) Low Saturation Voltage : VCE(sat)~4-W (Max.)

Contextual Info: TOSHIBA MG300Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH P O W ER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. H ig h In p u t Im p e d an ce EQ U IVA LEN T CIRCUIT H ig h Speed tf=0.5//s M a x . Cl t 1T = 0.5//s (M a x .)

MG300Q2YS60A

Abstract: PC2800 300A2
Contextual Info: MG300Q2YS60A MITSUBISHI IGBT Module MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

MG300Q2YS50

Contextual Info: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.3;i*s Max. 0 Inductive Load Low Saturation Voltage : v CE(sat) —3.6V (Max.)

Contextual Info: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • t High Input Impedance High Speed : tf^O.S/zs Max. Inductive Load Low Saturation Voltage

Contextual Info: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

Contextual Info: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

GE semiconductor data handbook

Abstract: ge-20 transistor TOSHIBA IGBT DATA BOOK MG300Q2YS65H IC3001
Contextual Info: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC