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    MG50G2DM1 Search Results

    MG50G2DM1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50G2DM1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG50G2DM1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50G2DM1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50G2DM1 Toshiba MOSFET Power Module Scan PDF

    MG50G2DM1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MG50G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20


    Original     		PDF MG50G2DM1 time700n HL093HD5 Code4-310 NumberTR00400310

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG50G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


    OCR Scan     		PDF MG50G2DM1

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    MG50G2DM1

    Abstract: S443 1251C 251C
    Text: TOSHIBA "Í0 -CDISCRETE/OPTQ} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR D ^ | 101725111 5 1 . 90D 16431 D7"-3f-ö?7 TOSHIBA GTR MODULE M G 5 0 G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF QDlb431_ MG50G2DM1 2-108B1A Ta-25Â di/4t-150A/ MC50G2DM1-4' D01b43S MG50G2DM1 MG50G2DH1-5 S443 1251C 251C

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    ttr01

    Abstract: MG50D2DM1 H125 250V MG50G2DM1 MG30D1ZM1 MG30D2DM1 MG30D2YM1 MG30G2DM1 MG30G2YM1 MG50D2YM1
    Text: V-ÿy-^xf •t ÿ i — it- ->'J3 MOS MOS FET F E T £ m s / 2 * !® o Hg/2flWB « M B » y 1- • ¡S M 7 ' zm-i 1 S ¿ ^ r - x é f t ( i « S á t i T l - '5 o 7 1; — * - f 7L- ■f ' - n — w DM 1 Dl , . ^ _ K2 o- w -K (C I) Oo -o \ \


    OCR Scan     		PDF H-101 ttr01 MG50D2DM1 H125 250V MG50G2DM1 MG30D1ZM1 MG30D2DM1 MG30D2YM1 MG30G2DM1 MG30G2YM1 MG50D2YM1

    2sk1029

    Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1
    Text: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1


    OCR Scan     		PDF 2SK578* 2SK447" 2SK568* 2SK1513" 2SK1029* MG15G1AM1 2SK1333* MG30D1ZM1 MG30D2YM1 MG30G2YM1 2sk1029 MP6702 2sk1513 2SK56 MG15C4HM1 MG50D2DM1

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431