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    Toshiba America Electronic Components MG50Q2YS50(AC,G)

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    MG50Q Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50Q1BS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50Q1BS11 Toshiba N channel IGBT Original PDF
    MG50Q1BS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50Q1BS11 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG50Q1ZS50 Toshiba TRANS IGBT MODULE N-CH 1200V 78A 5(2-94D7A) Original PDF
    MG50Q1ZS50 Toshiba GTR Module Silicon N Channel IGBT Original PDF
    MG50Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50Q2YK1 Unknown Scan PDF
    MG50Q2YK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG50Q2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG50Q2YK9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50Q2YL1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 50A Scan PDF
    MG50Q2YS40 Toshiba TRANS IGBT MODULE N-CH 1200V 50A 7(2-94D1A) Original PDF
    MG50Q2YS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50Q2YS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Scan PDF
    MG50Q2YS40 Toshiba GTR Module Silicon N-Channel IGBT Scan PDF
    MG50Q2YS50 Toshiba TRANS IGBT MODULE N-CH 1200V 78A 7(2-94D4A) Original PDF
    MG50Q2YS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG50Q2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50Q2YS50 Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF

    MG50Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (max) Enhancement-mode


    Original     		PDF MG50Q1ZS50 2-94D7A

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode


    Original     		PDF MG50Q1ZS50 MG50Q1ZS50

    MG50Q2YS50

    Abstract: toshiba mg50q2ys50
    Text: MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG50Q2YS50 2-94D4A MG50Q2YS50 toshiba mg50q2ys50

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3 µs max @Inductive load l Low saturation voltage : VCE (sat) = 3.6 V (max)


    Original     		PDF MG50Q1ZS50 MG50Q1ZS50

    MG50Q1BS11

    Abstract: TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent
    Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50Q1BS11 2-33D2A MG50Q1BS11 TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent

    3 phase ac sinewave phase inverter single ic

    Abstract: U5J diode
    Text: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG50Q2YS40 2-94D1A 3 phase ac sinewave phase inverter single ic U5J diode

    G50Q2YS50

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load


    OCR Scan     		PDF MG50Q2YS50A G50Q2YS50A G50Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES40

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50A 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: "TD TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA Difjj TtHTSSO D01ti070 D 90D 16070 SEMICONDUCTOR DJ-33-3S TOSHIBA GTR MODULE TECHNICAL DATA MG50Q2YK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm


    OCR Scan     		PDF D01ti070 DJ-33-3S MG50Q2YK1

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG50Q1ZS50 MG50Q1ZS50 TO SHIBA GTR M O DU LE SILICON N C HANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q1ZS50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Inductive Load • Low Saturation Voltage : v C E(sat) = 3-6Y (Max.)


    OCR Scan     		PDF MG50Q2YS50A 961001EAA1

    IRF 24N

    Abstract: MG50Q2YS50A 294D
    Text: TOSHIBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load • Low Saturation Voltage : v CE(sat) = 3-e v (Max.)


    OCR Scan     		PDF MG50Q2YS50A 2-94D4A 961001EAA1 10//s IRF 24N MG50Q2YS50A 294D

    MG50Q2YS50A

    Abstract: No abstract text available
    Text: TO SH IBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig /iu u u cu v e L/uau


    OCR Scan     		PDF MG50Q2YS50A 2-94D4A MG50Q2YS50A

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mß>;nn?Y^in Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/^s Max. (Max.) Low Saturation Voltage • S SI Cl 2 3 ± 0.5 2 3 ± 0.5


    OCR Scan     		PDF MG50Q2YS40

    MG50Q2YS40

    Abstract: No abstract text available
    Text: TO SH IBA MG50Q2YS40 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG50Q2YS40 U n it in mm HIGH PO W ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • H igh In p u t Im pedance • H ig h s p e e d : tf= 0.5/iS Max. trr = 0,5/.s (Max.)


    OCR Scan     		PDF MG50Q2YS40 1256C MG50Q2YS40

    MG50Q2YK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50Q2YK1 HIGH POWER SWITCHING APPLICATIONS. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current Forward Current


    OCR Scan     		PDF MG50Q2YK1 MG50Q2YK1

    DC MOTOR CONTROL IGBT

    Abstract: ES50A
    Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50A MG50Q ES50A 961001EAA1 DC MOTOR CONTROL IGBT ES50A

    MG50Q2YS40

    Abstract: VQE 12 61jl
    Text: TOSHIBA MG50Q2YS40 MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 -FAST-ON-TAB # 1 1 0 2 - 0 5 .6 1 0 . 3 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)


    OCR Scan     		PDF MG50Q2YS40 2-94D1A MG50Q2YS40 VQE 12 61jl

    Untitled

    Abstract: No abstract text available
    Text: MG50Q1BS11 TOSHIBA MG 5 0 Q 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG50Q1BS11 120oltage.

    MG50Q2YS40

    Abstract: No abstract text available
    Text: TO SH IBA MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 3 -M 5 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5^8 (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG50Q2YS40 2-94D1A MG50Q2YS40

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    MG50Q2YS91

    Abstract: 9t2 transistor ic 7800 MG50Q2YS9 PW03840796
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1 .O^is Max. V = 0.5ns (Max.)


    OCR Scan     		PDF MG50Q2YS91 PW03840796 MG50Q2YS91 9t2 transistor ic 7800 MG50Q2YS9

    MG50Q6ES40

    Abstract: g50q6es40
    Text: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES40 G50Q6ES40 2-94B1A 961001EAA2 MG50Q6ES40 g50q6es40