MG50Q6ES51A Search Results
MG50Q6ES51A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| MG50Q6ES51A |
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GTR Module Silicon N Channel IGBT | Scan | |||
| MG50Q6ES51A |
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N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Scan |
MG50Q6ES51A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT |
OCR Scan |
MG50Q6ES51A | |
ksh 200 TRANSISTOR equivalent
Abstract: MG50Q6ES51 MG50Q6ES51A KSH 200 TRANSISTOR
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OCR Scan |
MG50Q6ES51A MG50Q6ES51 2-108E2A 961001EAA1 ksh 200 TRANSISTOR equivalent MG50Q6ES51A KSH 200 TRANSISTOR | |
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Contextual Info: T O SH IB A MG50Q6ES51A TOSHIBA GTR MODULE •WB ^M i MF «F SILICON N CHANNEL IGBT ta MF MF ■ » ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. |
OCR Scan |
MG50Q6ES51A 961001EAA1 |