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Toshiba America Electronic Components MG75N2YS1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MG75N2YS1		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Baumer Electric Ag MY-COMG75N80/L Proximity Sensor NO NPN 5V to 36VDC 3-Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MY-COMG75N80/L		3			1 $513.13 10 $487.76 100 $487.76 1000 $487.76 10000 $487.76	Buy Now

MG75N Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG75N		OKI Electronic Components	General PLL, 0.22um Phase-Locked Loop (SPLL22x) Macro function Family		Original	PDF
MG75N1BS1		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
MG75N2YK1		Unknown			Scan	PDF
MG75N2YL1		Unknown			Scan	PDF
MG75N2YS1		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
MG75NCSA		OKI Electronic Components	General PLL, 0.22um Phase-Locked Loop (SPLL22x) Macro function Family		Original	PDF

MG75N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MG74n Abstract: sta 741 a MG73N MG75N Text: 0.22µm ASICs MG73N/74N/75N FAMILY LISTING MG73N MG74N MG75N No. of No. of Raw Family 3LM Family 4LM Family 5LM Base Array Pads Gates Usable Gates Usable Gates Usable Gates MG7xNB02 68 44,640 36,158 42,408 42,408 MG7xNB04 108 123,600 86,520 117,420 117,420	Original	PDF	MG73N/74N/75N MG73N MG74N MG75N MG7xNB02 MG7xNB04 MG7xNB06 MG7xNB08 MG7xNB10 MG7xNB12 MG74n sta 741 a MG73N MG75N
ic ARM Abstract: sram pull down Text: OKI 電子デバイス MG73N/74N/75N ファミリ PJDG7XN000-01 発行日： 2002 年 1 月 31 日暫定 0.22µm CMOS エンベデッドアレイ • 概要 MG73N/MG74N/MG75N ファミリは0.22 µm CMOS プロセスを用いた 3/4/5 層メタル構造の高速/高集積/低消	Original	PDF	PJDG7XN000-01 MG73N/74N/75N MG73N/MG74N/MG75N MG75N MG74N MG73N 512kb ic ARM sram pull down
MG74n Abstract: MG75N oki cross MG73N inverter ic 3524 application Text: DATA S HEET O K I A S I C P R O D U C T S MG73N/74N/75N 0.22µm Customer Structure Array August 2002 MG73N/74N/75N ii 0.22µm Customer Structure Array Oki Semiconductor CONTENTS	Original	PDF	MG73N/74N/75N MG73N/74N/75N MG74n MG75N oki cross MG73N inverter ic 3524 application
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
mg75n2ys40 Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上げます。廃止品種 1 形名 02BZ2.2~4.7 代替品種	Original	PDF	02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
mg75n2ys40 Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
mg75n2ys Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y Text: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5\|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.	OCR Scan	PDF	MG75N2YS1 mg75n2ys LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
MG75N2YS1 Abstract: No abstract text available Text: GTR MODULL SILICON N CHANNEL IGBT MG75N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf= l .Ofis Max. trr= 0 .5fis (Max. ) . Low Saturation Voltage: VcE(sat)=5.OV(Max.) . Enahncement-Mode . Includes a Complete Half Bride in One	OCR Scan	PDF	MG75N2YS1 MG75N2YS1
Untitled Abstract: No abstract text available Text: GTR MODULL SILICON N CHANNEL IGBT MG75N1AS1 HIGH P O W E R S W I T C H I N G APP L I C A T I O N S . Unit in m m . H i g h Input Impe d a n c e 5 3± 0.5 . High S p e e d : tf= 0. 7fis Max. ( l £ = 75A) . Low Saturation Voltage : V ^ e ( s a t ) = 5 .O V ( M a x . )	OCR Scan	PDF	MG75N1AS1 MG75N1AS!
igbt high power Abstract: MG75N1BS1 Text: GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance . High Speed : tf=1.0iis Max. . Low Saturation Voltage : VcE(sat) = 5.0V(Max.) . Enhancement-Mode . The Electrodes are Isolated from Case.	OCR Scan	PDF	MG75N1Bm MG75N1BS1 igbt high power MG75N1BS1
TA8172AF Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16	OCR Scan	PDF	015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	PDF	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
MG30H1BL1 Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX	OCR Scan	PDF	00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
MG100g2ys1 Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1 Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series	OCR Scan	PDF	EG50N2YS9* G15N2YSI MG25N2YS1 MG50N2YS1 G35Q2YSI MG25Q2YS1 MG50Q2YS1 MG25S2YS1 G25N1JS1 G50N1JS1 MG100g2ys1 mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1