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Contextual Info: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field	OCR Scan	KMZ11B1 KMZ11B1 MGD804 OT96-1 076E03S MS-012AA	PDF
KMZ11B1 Abstract: hx 36 MLC716 MS-012AA SC17 KA 209 MGD804 MSA925 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET KMZ11B1 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1996 Dec 11 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION	Original	KMZ11B1 KMZ11B1 SCA52 147021/00/03/pp8 hx 36 MLC716 MS-012AA SC17 KA 209 MGD804 MSA925	PDF

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Contextual Info: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field

OCR Scan

KMZ11B1 KMZ11B1 MGD804 OT96-1 076E03S MS-012AA

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KMZ11B1

Abstract: hx 36 MLC716 MS-012AA SC17 KA 209 MGD804 MSA925
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET KMZ11B1 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1996 Dec 11 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION

Original

KMZ11B1 KMZ11B1 SCA52 147021/00/03/pp8 hx 36 MLC716 MS-012AA SC17 KA 209 MGD804 MSA925

PDF