MGF0952P Search Results

MGF0952P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
MGF0952P		Mitsubishi			Scan	PDF	190.07KB	4

MGF0952P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
42AA Abstract: MGF0952P mgf09 Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	MGF0952P MGF0952P 25deg 1000pF 330uF 42AA mgf09	PDF
c id Abstract: 42AA MGF0952P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	MGF0952P MGF0952P 35GHz 25deg c id 42AA	PDF
812 946 Abstract: 0946 L 0946 MGF0952P 952P Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> PRELIMINARY MGF0952P L & S BAND G a As F E T [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm	OCR Scan	MGF0952P MGF0952P 15GHz 15GHz 25dBm 800mA 812 946 0946 L 0946 952P	PDF
4 pin 9v Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm	Original	MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA 4 pin 9v	PDF
MGF0952P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	MGF0952P MGF0952P 35GHz 25deg	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm	Original	MGF0952P MGF0952P 15GHz 25dBm 15GHz 700mA	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm	Original	MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA June/2004	PDF
60Ghz Abstract: MGF0952P 211G idq042a Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm	Original	MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA 60Ghz 211G idq042a	PDF
MGF0952P Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm	Original	MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA	PDF
42AA Abstract: MGF0952P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	MGF0952P 95GHz MGF0952P 25deg -900KHz) 900KHz) -600KHz) 42AA	PDF
42AA Abstract: MGF0952P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	MGF0952P 95GHz MGF0952P 25deg -900KHz) 900KHz) -600KHz) 42AA	PDF
s band Contextual Info: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm	Original	MGF0952P MGF0952P 15GHz 25dBm 15GHz 700mA s band	PDF
42AA Abstract: MGF0952P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	MGF0952P 17GHz MGF0952P 14GHz 25deg 42AA	PDF
MGF0952P Abstract: 42AA Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P －－ Sample history:	Original	MGF0952P MGF0952P 25deg 61GHz -10MHz) 10MHz) 42AA	PDF

MGFS45H2201G Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety	Original	H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf	PDF