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Mitsubishi Electric MGF1923 RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MGF1923		548			1 $9 10 $9 100 $9 1000 $4.5 10000 $4.5	Buy Now

MGF1923 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
MGF1923		Mitsubishi	TAPE CARRIER SMALL SIGNAL GaAs FET		Scan	PDF	508.54KB	5
MGF1923		Mitsubishi	TAPE CARRIER SMALL SIGNAL GAAS FET		Scan	PDF	254.26KB	5

MGF1923 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli	OCR Scan	MGF1923 13dBm 12GHz	PDF
small signal GaAs FET Abstract: MGF1923 IL86 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1923 TAPE CARRIER SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 9 2 3 , low noise GaAs FET w ith an N-channel Schottky gate, is designed for use in S to Ku band ampli fiers. The M G F 1 9 2 3 is mounted in the super 12 tape.	OCR Scan	MGF1923 12GHz GF1923 small signal GaAs FET MGF1923 IL86	PDF
MGF1923 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 9 2 3 , lo w noise GaAs FET w ith an N -channel S ch o ttky gate, is designed fo r use in S to Ku band a m p li Unit: millimeters inches	OCR Scan	MGF1923 MGF1923 12GHz 12GHz	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1923 ! i TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION The M G F1923, low noise GaAs FET w ith an N-channel Schottky gate, is designed fo r use in S to Ku band ampli fiers. The M G F1923 is mounted in the super 12 tape.	OCR Scan	MGF1923 F1923, F1923 12GHz 13dBm 12GHz 10rnA	PDF
MGF1200 Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.	OCR Scan	MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A	PDF
MGF4919G Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10	OCR Scan	MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A	PDF
MGF1425 Abstract: MGFC1423 MGF1425-61-16 MGF1423 MGFC1425 mitsubishi application mg series gaas MGF-C MGF1923-01 Contextual Info: A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION The MGF1423/1425 series devices are low noise GaAs FETs wtih N-channel schottky gates. These devices are suitable for a wide range of amplifier and oscillator applications in S to Ku-band. In die form, the devices are	OCR Scan	MGF1423/1425 MGF1323 MGF1923 MGFC1423, MGFC1425 MGF1323, MGF1423, MGF1425, MGF1923 MGF1425 MGFC1423 MGF1425-61-16 MGF1423 mitsubishi application mg series gaas MGF-C MGF1923-01	PDF