MGF14 Search Results

MGF1402B

Abstract: MGF1402
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed m etal-ceram ic package as­

0619

Abstract: g720
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li­ U n it m i l l i m e t e r s i .r ic h e s t

MGF1404

Contextual Info: MGF1404-61-16 Transistors P-Channel UHF/Microwave MOSFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)80m P(D) Max. (W)200m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m

MGF1451A

Contextual Info: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A Low Noise MES FET DESCRIPTION Outline Drawing The MGF1451A is designed for use in S to Ku band power amplifiers. FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION S to Ku band power Amplifiers

MGF1502

Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Contextual Info: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A

MGF1412

Abstract: MGF1412-11-09 MGFC1412 79S12
Contextual Info: ^M ITSUBISHI Die_ MGFC1412 Package MGF1412 ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFC1412 and MGF1412 are low noise GaAs FETs with a N-channel Schottky gare and are designed for use in low noise amplifiers. The MGF1412 features a hermetically sealed

MGF1423B

Abstract: fet sm 367 KU 612 614 104 133 21 D094 MGF1423
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION T he M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -chann el S ch o ttky gate, is designed fo r use in S to Ku band am pli­ fiers. FEATURES • High linear power gain • High o utp ut power at 1 dB gain compression

MGF1403

Abstract: 2SK276
Contextual Info: MITSUBISHI {DISCRETE S O TL T|,E4‘ÌAEe] 001G043 S T ~ m MITSUBISHI SEMICONDUCTOR <GaAs FET> _ ; 6249829 MITSUBISHI MGF1403 2SK276 ( D I S C R E T E SC) 91D 10043 D T-BM5 FOR M IC R O W A VE LO W -NO ISE A M P L IF IE R S N-CHANNEL SCHOTTKY BARR IER GATE T Y P E

MGF1425

Contextual Info: MITSUBISHI {DISCRETE SC> TÏ 0^1^54^,32^ 00100L0 B 1~ MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 249 82 9 MITSUBISHI DISCRETE SC I : MGF1425 91 D 10060 DT-31&#39;35 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The M G F1425

MGF1425

Abstract: MGFC1423 MGF1425-61-16 MGF1423 MGFC1425 mitsubishi application mg series gaas MGF-C MGF1923-01
Contextual Info: A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION The MGF1423/1425 series devices are low noise GaAs FETs wtih N-channel schottky gates. These devices are suitable for a wide range of amplifier and oscillator applications in S to Ku-band. In die form, the devices are

Contextual Info: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ U n i t : m i l l i m e t e r s inches

MGF1403B

Abstract: GaAs FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET MITSUBISHI ELECTRIC

fet K 793

Abstract: MGF1402 cdb 838 S22VS MGF1402B Q017 91 569 775 -35 S 30ria
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> • b24tlfl2ti 0017040 b47 ■ MGF1402B LOW NOISE GaAs FET DESCRIPTION OU TLINE DRAWING The MGF1402B low-noise GaAs FET w ith an N-channel Schottky gate is designed fo r use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic

MGF1402

Abstract: 2SK274 MGF1402 -01
Contextual Info: MITSUBISHI {DISCRETE SC> TI DE IbaMTflET 0010033 2 MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 249 82 9 MITSUBISHI MGF1402 2SK274 (DISCRETE SC) D T -a -zs 9 1 D 10033 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTIONS The M G F1402

0g18

Abstract: 0G66
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band am pli­ fiers. The hermetically sealed metal-ceram ic package as­

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a

mgf*1412

Abstract: MGF1412 MGF1412B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1412B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ fiers. The hermetically sealed metal-ceramic package as­ sures minimum parasitic losses, and has a configuration

cha 0438

Contextual Info: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 2 B low-rtoise GaAs FET w ith an N -ch an nel S ch o ttk y g ate is designed fo r use in S to X band am pli­ fiers and oscillators. Th e herm etically sealed m etalceram ic

ku Band Power GaAs FET

Contextual Info: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A Microwave Power GaAs FET DESCRIPTION Outline Drawing The MGF1451A is designed for use in S to Ku band power amplifiers. FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z

MGF1403B

Abstract: GSO 69 fet K 727
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E SC R IP T IO N T h e M G F 1 4 0 3 B lo w -n o is e G aAs FET w ith an N -c h a n n e l S c h o ttk y g ate is designed fo r use in S to Ku ban d a m p li­ fiers. T h e h erm etically sealed m e ta l-c e ra m ic p ac k a g e as­

gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Contextual Info: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel O U TLIN E DRAW ING Unit: m illim eters inches 4 M ÍN . (0 .1 5 7 M IN . ) 4 M IN . ( 0 .1 5 7 M IN .) S cho ttky gate is designed fo r use in Ku band am plifiers.