MGFC38V6472 Search Results

Mitsubishi

Abstract: MGFC38V6472
Contextual Info: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V6472 6.4 ~ 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

Contextual Info: < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V6472 6 .4 —7.2G Hz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 6 .4 - 7 . 2 GHz band am plifiers. The herm etically sealed m etal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m