MGFC39V7177A Search Results

MGFC39V7177A

Abstract: 71F71
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V7177A • tftwW gxs Wifi Si>n'K 7 .1 — 7.7GHz BAND 8W INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers* The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> „OJ»«*"*'' So«'* MGFC39V7177A p^ 1 7 .1 — 7 .7 G H z BAND 8 W IN TER N A LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 7 .1 —7 . 7

MGFC39V7177A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFC39V7177A

Abstract: MGFC39V7177
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A p ftE U ' . N o t,t .» n n ß . . "XVi'S's T il<5 » n o t ï f ï ,ts 8f s c 7 .1 — 7 .7 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET .-,.a O 'e t ! , c DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d

Contextual Info: < C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

AN rf power amplifier

Contextual Info: < C band internally matched power GaAs FET > MGFC39V7177A 7.1 – 7.7 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MINA?* p R Ö MGFC39V7177A - ' y. «'-' f ;«ep^^ e ° ‘ 7 .1 -7 .7 G H * BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 9 V 7 1 7 7 A is an internally im ped an ce-m atched GaAs power F E T especially designed for use in 7 . 1 —7 .7

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed