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    MGFS45V Price and Stock

    Mitsubishi Electric MGFS45V2527A-01

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    Bristol Electronics MGFS45V2527A-01 5 1
    • 1 $96
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    Quest Components MGFS45V2527A-01 4
    • 1 $104
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    Mitsubishi Electric MGFS45V2123A

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    Bristol Electronics MGFS45V2123A 1
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    Quest Components MGFS45V2123A 1
    • 1 $375
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    MGFS45V Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFS45V2123 Mitsubishi 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET Original PDF
    MGFS45V2123A Mitsubishi 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF
    MGFS45V2123A Mitsubishi 2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFS45V2325 Mitsubishi 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET Original PDF
    MGFS45V2325A Mitsubishi 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF
    MGFS45V2325A Mitsubishi 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFS45V2527 Mitsubishi 2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET Original PDF
    MGFS45V2527A Mitsubishi 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF
    MGFS45V2735 Mitsubishi 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET Original PDF
    MGFS45V2735 Mitsubishi 2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFS45V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFS45V2123A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2123A MGFS45V2123A 079MIN. 25deg

    MGFS45V2735

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc 25deg

    MGFS45V2735

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2123A MGFS45V2123A -45dBc 079MIN. 25deg

    MGFS45V2325A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2325A MGFS45V2325A 079MIN. -45dBc 25deg

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2123A MGFS45V2123A 079MIN. 25ohm GF-51

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2527A MGFS45V2527A 079MIN. 25ohm GF-51

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2123A MGFS45V2123A 079MIN. -45dBc

    MGFS45v

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45V2527B 079MIN. -45dBc MGFS45v

    mgf*S45V2527A

    Abstract: MGFS45V2527A MGFS45V2527
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2527A MGFS45V2527 079MIN. 25deg mgf*S45V2527A MGFS45V2527A

    MGFS45V2325A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2325A MGFS45V2325A 25deg

    MGFS45V2735

    Abstract: 051 166
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc 051 166

    GAAS FET AMPLIFIER

    Abstract: mgf*S45V2527A MGFS45V2527 MGFS45V2527A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2527A MGFS45V2527 GAAS FET AMPLIFIER mgf*S45V2527A MGFS45V2527A

    MGFS45V2123A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2123A MGFS45V2123A -45dBc 25deg

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2325A 2.3 – 2.5 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2325A MGFS45V2325A 079MIN. -45dBc

    051 166

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc 051 166

    MGFS45V2123

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3


    Original     		PDF MGFS45V2123 MGFS45V2123 -45dBc

    MGFS45V2325A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2325A MGFS45V2325A 079MIN. 25deg

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F S 4 5 V 2 3 2 5 is an in te rn a lly im p e d a n ce m atch e d G a A s p o w e r FE T e s p e c ia lly d e s ig n e d fo r use in 2 .3 -2 .5


    OCR Scan     		PDF MGFS45V2325

    MGFS45V2735

    Abstract: No abstract text available
    Text: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED G a As FET DESCRIPTION The M G FS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 G H z band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFS45V2735 MGFS45V2735 -45dBc 25deg

    mgf*S45V2527A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F S 45V 252 7A is an internally im pedance-matched GaAs power FE T especially designed for use in 2.5 - 2.7 G H z band amplifiers.The hermetically sealed metal-ceram ic


    OCR Scan     		PDF MGFS45V2527A -45dBc mgf*S45V2527A

    MGFS45V2123

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1-2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING The M G FS45V2123 is an internally im pedance matched GaAs power FET especially designed for use in 2.1 -2 .3 GHz band amplifiers. The herm etically sealed m etal-ceramic


    OCR Scan     		PDF MGFS45V2123 FS45V2123 -45dBc MGFS45V2123

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING The MG FS45V2527 is an internally im pedance matched GaAs power FET especially designed for use in 2 .5 -2 .7 GHz band amplifiers. The herm etically sealed m etal-ceramic


    OCR Scan     		PDF MGFS45V2527 FS45V2527 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance m atched GaAs power FET especially designed for use in 2.3~2.5


    OCR Scan     		PDF MGFS45V2325 MGFS45V2325 -45dBc