MGFX39 Search Results

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFX39V0717

Abstract: MGFX39
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFX39V0717 10.7 ~ 11.7GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

MGFX39V0717

Abstract: High voltage GaAs FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFX39V0717 1 0 .7 — 1 1 .7G H z B A ND 8 W INTERNA LLY M ATCHD GaAs FET DESCRIPTION The M G F X 3 9 V 0 7 1 7 is an internally impedance matched GaAs power F E T especially designed for use in 1 0 .7 — 1 1 .7 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFX39V0717

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic

X39V0717

Contextual Info: MITSUBISHI SEM ICONDUCTOR <GaAs FET> M G F X 39V 0717 1 0 . 7 - 1 1.7GHz B A N D 8 W IN T E R N A L L Y M A T C H D G aA s FET DESC R IPT IO N The MGFX39V0717 is an internally impedance matched GaAs power FET especially designed for use in 10.7 — 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFX39V0717 1 0 .7 — 1 1 .7 G H z BA N D 8 W INTERNALLY M ATCHD GaA$ FET DESCRIPTION The M G F X 3 9 V 0 7 1 7 is an internally impedance matched G a A s pow er F E T especially designed for use in 1 0 .7 - 1 1 .7 G H z band amplifiers. The hermetically sealed metal-ceramic

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m