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    MGP4N60E Search Results

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    MGP4N60E Price and Stock

    Rochester Electronics LLC MGP4N60ED

    IGBT, 6A, 600V, N-CHANNEL
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    Rochester Electronics LLC MGP4N60E

    IGBT, 6A, 600V, N-CHANNEL
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    DigiKey MGP4N60E Bulk 2,810 503
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    onsemi MGP4N60ED

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    Rochester Electronics MGP4N60ED 3,631 1
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    onsemi MGP4N60E

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    Rochester Electronics MGP4N60E 2,810 1
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    MGP4N60E Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGP4N60E Motorola Insulated Gate Bipolar Transistor Original PDF
    MGP4N60E On Semiconductor Insulated Gate Bipolar Transistor N-Channel Original PDF
    MGP4N60E On Semiconductor IGBT Chip, N Channel, 600V, TO-220AB, 3-Pin Original PDF
    MGP4N60E/D Motorola IGBT IN TO-220 4.0 A Original PDF
    MGP4N60ED On Semiconductor IGBT Chip, N Channel, 600V, TO-220AB, 3-Pin Original PDF
    MGP4N60ED On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Original PDF
    MGP4N60E-D On Semiconductor Insulated Gate Bipolar Transistor N-Channel Enhanc Original PDF
    MGP4N60ED/D Motorola IGBT & DIODE IN TO-220 4.0 A Original PDF
    MGP4N60ED-D On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parall Original PDF
    MGP4N60EDG On Semiconductor IGBT Chip: N Channel: 600V: TO-220AB: 3-Pin Original PDF
    MGP4N60EG On Semiconductor IGBT Chip: N Channel: 600V: TO-220AB: 3-Pin Original PDF

    MGP4N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGP4N60ED

    Abstract: ad 152 transistor
    Text: MOTOROLA Order this document by MGP4N60ED/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGP4N60ED N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–220 4.0 A @ 90°C 6.0 A @ 25°C


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    PDF MGP4N60ED/D MGP4N60ED IGBTMGP4N60ED/D MGP4N60ED ad 152 transistor

    MGP4N60E

    Abstract: transistor 342 pf
    Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original
    PDF MGP4N60E/D MGP4N60E MGP4N60E transistor 342 pf

    MGP4N60E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original
    PDF MGP4N60E/D MGP4N60E MGP4N60E

    MGP4N60E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original
    PDF MGP4N60E/D MGP4N60E MGP4N60E

    MGP4N60ED

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGP4N60ED N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–220 4.0 A @ 90°C 6.0 A @ 25°C


    Original
    PDF MGP4N60ED/D MGP4N60ED IGBTMGP4N60ED/D MGP4N60ED

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    wiring diagram brushless AC motor

    Abstract: IEC555-1 2x27k AN1590 IR2112 circuit motors simple dc motor model MOTOROLA sensorless brushless dc controller IR2112 application note 300w dc motor speed controller LM339n as motor controller
    Text: Order this document by AN1627/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1627 LOW COST HIGH EFFICIENCY SENSORLESS DRIVE FOR BRUSHLESS DC MOTOR USING MC68HC 7 05MC4 By Leos Chalupa Roznov System Application Laboratory Motorola, Roznov pod Radhostem, Czech Republic


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    PDF AN1627/D AN1627 MC68HC 05MC4 MC68HC05MC4) wiring diagram brushless AC motor IEC555-1 2x27k AN1590 IR2112 circuit motors simple dc motor model MOTOROLA sensorless brushless dc controller IR2112 application note 300w dc motor speed controller LM339n as motor controller

    LM339n as motor controller

    Abstract: wiring diagram brushless AC motor 5223 eprom 300w BLDC bridge 300w dc motor speed controller AN1590 PWM IR2112 230v to 15v dc smps circuit diagram IR2112 MC68HC705MC4
    Text: Freescale Semiconductor, Inc. Order this document by AN1627/D Freescale Semiconductor AN1627 LOW COST HIGH EFFICIENCY SENSORLESS DRIVE FOR BRUSHLESS DC MOTOR USING MC68HC 7 05MC4 By Leos Chalupa Roznov System Application Laboratory Freescale, Roznov pod Radhostem, Czech Republic


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    PDF AN1627/D AN1627 MC68HC 05MC4 MC68HC05MC4) LM339n as motor controller wiring diagram brushless AC motor 5223 eprom 300w BLDC bridge 300w dc motor speed controller AN1590 PWM IR2112 230v to 15v dc smps circuit diagram IR2112 MC68HC705MC4

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


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    PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    tl4311

    Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
    Text: SG388CH/D 2000  4   2         SG388CH/D 2000  3   2  SCILLC,2000  © 1999 “” http://onsemi.com.cn         SCI LLC      ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O


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    PDF SG388CH/D r14525 SG388CH/D tl4311 SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150

    PWM IR2112

    Abstract: 230v dc motor drive circuit diagram DC MOTOR SPEED CONTROL USING IGBT 300v dc 230v DC motor speed controllers 300w dc motor speed controller wiring diagram brushless AC motor three phase bldc motor drive schematic hex code LM339n as motor controller LM339 AN1627
    Text: Freescale Semiconductor, Inc. MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1627/D SEMICONDUCTOR APPLICATION NOTE AN1627 LOW COST HIGH EFFICIENCY SENSORLESS DRIVE FOR BRUSHLESS DC MOTOR USING MC68HC 7 05MC4 By Leos Chalupa Roznov System Application Laboratory


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    PDF AN1627/D AN1627 MC68HC 05MC4 MC68HC05MC4) PWM IR2112 230v dc motor drive circuit diagram DC MOTOR SPEED CONTROL USING IGBT 300v dc 230v DC motor speed controllers 300w dc motor speed controller wiring diagram brushless AC motor three phase bldc motor drive schematic hex code LM339n as motor controller LM339 AN1627

    P4N60

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P4N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 4.0 A @ 90°C


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    PDF P4N60ED/D MGP4N60ED P4N60

    4n60e

    Abstract: No abstract text available
    Text: M O TO RO LA O rder this docum ent by M GP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


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    PDF GP4N60E/D 4n60e

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


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    PDF MGP4N60E/D

    GP4N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 4.0 A @ 90°C 6.0 A @ 25°C


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    PDF MGP4N60ED/D GP4N60

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


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    PDF MGP4N60E

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M GP4N60E/D Designer's Data Sheet I n s u l a t e d Gate B ip o lar T r a n s i s t o r MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


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    PDF GP4N60E/D MGP4N60E 21A-06 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGP4N60ED N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 4.0 A @ 90°C 6.0 A @ 25°C


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    PDF MGP4N60ED/D

    P4N60

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M G P4N60ED Insulated Gate Bipolar Transistor w ith Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 4.0 A @ 90“C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


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    PDF MGP4N60ED P4N60

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


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    PDF 2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code