MGW12N120E Search Results
MGW12N120E Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| MGW12N120E |
|
Enhancement-Mode Silicon Gate | Original | 116.88KB | 6 | |||
| MGW12N120E/D |
|
IGBT IN TO-47 12 A | Original | 116.87KB | 6 |
MGW12N120E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: MOTOROLA Order this document by MGW12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MGW12N120E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced |
OCR Scan |
MGW12N120E/D | |
TO247AE
Abstract: MGW12N120E 25C09
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Original |
MGW12N120E/D MGW12N120E TO247AE MGW12N120E 25C09 | |
vq 123Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high |
OCR Scan |
O-247 125CC MGW12N120E vq 123 |