tristate buffer
Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
Text: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to
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4110F
tristate buffer
smd transistor AO
HEX TO DECIMAL
tristate buffer cmos
A101
A201
MH1099E
MH1156E
PO11F
MH1332E
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DIGITAL IC TESTER report for project
Abstract: atmel 504 IO33 ATC18RHA 4261C virage IO33
Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC18RHA Core and IO18 pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main • • • • • • • • • • • • • • Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V Environments
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ATC18RHA
655Mbps)
4261C
DIGITAL IC TESTER report for project
atmel 504
IO33 ATC18RHA
virage
IO33
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ta 8268
Abstract: qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to
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F7400
ta 8268
qml-38535
4090
F 01B01
marking code 33916
MH1242ER
smd code MH1
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A101
Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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20nts
4110H
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
AMI 1108
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A101
Abstract: A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard
Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110I
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
atmel 838
atmel edac
dsp radiation hard
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DIGITAL IC TESTER report for project
Abstract: ATMEL 644 IO33 4261F ATC18RHA Genesys Logic MQFP-F196 5962-06B02 atmel 216 4261b
Text: Features • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments
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ATC18RHA
655Mbps)
4261F
DIGITAL IC TESTER report for project
ATMEL 644
IO33
Genesys Logic
MQFP-F196
5962-06B02
atmel 216
4261b
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DIGITAL IC TESTER report for project
Abstract: MCGA349 PL33RXZ atmel 504 ATMEL 644 ATC18RHA 5962-06B02 MQFP-T352 IO33 mcga
Text: Features • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments
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ATC18RHA
655Mbps)
4261E
DIGITAL IC TESTER report for project
MCGA349
PL33RXZ
atmel 504
ATMEL 644
5962-06B02
MQFP-T352
IO33
mcga
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ATMEL 634
Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
Text: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110G
ATMEL 634
ambit rev 4
C 828 dual
mcga
SRAM edac
A101
A201
MH1099E
MH1156E
MH1242E
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110Lâ
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4110L
Abstract: ATMEL 622 MH1RT QML A101 A201 MH1099E MH1156E MH1242E MH1332E
Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110L
ATMEL 622
MH1RT QML
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
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A101
Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110K
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
HEX TO DECIMAL
ATMEL 220
dsp radiation hard
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Atmel 544
Abstract: atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D
Text: Features • • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells Up to 6.5 usable Mgates equivalent NAND2 Operating voltage 1.8V for core and 3.3V or 2.5V for I/O’s Memory Cells Compiled or synthesized to the Requirements of the Design
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655Mbps)
4261G
Atmel 544
atmel 504
atmel 404
MQFPT352
MLGA625
725m
5962-06B02
atmel h 404
MH1242E
404D
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Transistor Equivalent list po55
Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
Text: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to
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5962-01B01
Abstract: perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V
Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-02-11 Thoma M. Hess Add device type 09 – 32 and appendix A. - phn REV A SHEET 55 REV A A A A A A A A A A A A A A A A A A A A SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 REV A A
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F7400
5962-01B01
perfo 124 373
01B01
vhdl code 4794
qml-38535
3629 BP
4090
Datasheet ci 4009
5962-01B0115V9A
5962-01B0111V
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qml-38535
Abstract: 6227 4090 Datasheet ci 4009 Y-351 vhdl code 4794 smd code MH1
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to
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F7400
qml-38535
6227
4090
Datasheet ci 4009
Y-351
vhdl code 4794
smd code MH1
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