Untitled
Abstract: No abstract text available
Text: R F 3.0 2.7 2.5 2.0 2.0 1.7 1.5 1.5 1.4 1.3 1.2 1.2 1.0 s or 150 150 150 150 150 150 150 150 150 150 150 150 150 ct du In NG TI RA s T mp EN A RR UM CU XIM MA SERIES 4726 95 100 115 115 115 120 120 135 135 135 135 135 140 ) Hz (G N. MI ) Hz (M M. NO 22
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4726R
HP4291A
4726-150RC
4726R-150NC
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1745-825
Abstract: Allen-Bradley slc 150 Allen-Bradley slc 150 1745-pcc
Text: PRODUCT DA TA I yj’T5 SLC TM Programmable Controllers EEPROM Memory Module- Catalog No. 1745-MI The EEPROM Memory Module The EEPROM is a non-volatile memory in convenient modular form,for use with SLC 100 and SLC 150 Programmable Controllers. A Series B module or a Series A module having a28-pin chip must be used
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1745-MI
a28-pin
28-pin
1745-825
Allen-Bradley slc 150
Allen-Bradley slc 150 1745-pcc
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MI-50-150NM
Abstract: 5050S
Text: • Ä P ALUMINUM NITRIDE COAXIAL TERMINATIONS MI-50- 15S/ALN MI-50- 15SM/ALN MI-50- 50S/ALN MI-50- 50SM/ALN MI-50- 100S/ALN MI-50- 100S1VI/ALN MI-50- 150S/ALN MI-50 150SM/ALN MI-50 250S/ALN MI-50 250SM/ALN 15 15 50 50 100 100 150 150 250 250 12 12 6 6 3 3
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MI-50-
15S/ALN
15SM/ALN
50S/ALN
50SM/ALN
100S/ALN
MI-50-150NM
5050S
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CTU-11R
Abstract: MI152 CTB-34
Text: SANKE N ELECTRIC H E U S A D I 7^0741 IVrm :100— 600V OOOOGf l ö T | H lo :1.5— 6.0A MI/CTU Series Absolute Maximum Rating V rsm V (V) Type No. rm M I-152DS MI-152DR 250 200 250 200 CTU-11S CTU-11R 150 100 150 100 CTU-12S CTU-12R 250 200 250 450 200
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50HzHaK
I-152DS
MI-152DR
CTU-11S
CTU-11R
CTU-12S
CTU-12R
CTU-14S
CTU-14R
CTU-16S
MI152
CTB-34
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varistor SKVA 20 B 550
Abstract: SKVA 20 B 250 v 20 k 275 varistor SKVC20A460 20B250 Semikron SKVC skva20b
Text: S E MI K R O N INC 3bE D • fll3bb71 □ Q G 2 clflD S M S E K C ZnO Varistors I D2 Ip1»3' W p1>3> max. repetitive max. A max. nonrepetitlve A V V V J SKVA14A42 SKVA14 A 60 42 60 55 80 68 100 150 150 2000 2000 7,9 11 SKVA20B130 SKVA 14 A 150 130 150 170
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fll3bb71
SKVA14A42
SKVA14
SKVA20B130
fll3bfci71
varistor SKVA 20 B 550
SKVA 20 B 250
v 20 k 275 varistor
SKVC20A460
20B250
Semikron SKVC
skva20b
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IXYS DS 145
Abstract: No abstract text available
Text: PIXYS_ MegaMOS FET IXTH/IXTM 67N10 IXTH / IXTM 75N10 p v DSS ^D25 100 V 100 V 67 A 75 A DS on 25 mi] 20 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj =25°C to150°C 100 V VDQB T j = 25° C to 150° C; RGS= 1 M il 100 V VGS
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67N10
75N10
to150
75N10
O-247
T0-204
O-204
IXYS DS 145
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Untitled
Abstract: No abstract text available
Text: DRAWING NO. REV. 32-1055 G .150 MAX .060 MATERIALS: FLANGE: COPPER PER ASTM B301 SUBSTRATE: BERYLLIUM OXIDE TAB: BERYLLIUM COPPER PER QQ-C-533 COVER: ALU MI NA OXIDE RESISTIVE FILM: NICHROME .100 FINISH: FLANGE: NICKEL PER QQ-N-290 TAB: TIN PER M IL-T-10727
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QQ-C-533
QQ-N-290
IL-T-10727
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2N3702 NATIONAL SEMICONDUCTOR
Abstract: national 2N3392 NATIONAL SEMICONDUCTOR TO-92 2N3393 2N3702 BC338/BC328 2N3391A 2N3392 PN3565 2N4124
Text: n NAIL SEMICOND -[DISCRETE t.3E D • bSD113a Q03TS33 b7ti Devices V CE0 sust (Volts) Min 25 NPN PNP mi mA NF (dB) (MHz) Min mA Max 5.0 P D (Amb) Package (mW) @25 °C Max Min Max 2N3391A 100 250 500 2.0 120 Typ. 2.0 2N3392 100 150 300 2.0 120 Typ. 2N3393
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bS0113D
003TS33
2N3391A
T0-92
2N3392
2N3393
2N3415
2N4124
2N5172
BC238
2N3702 NATIONAL SEMICONDUCTOR
national 2N3392
NATIONAL SEMICONDUCTOR TO-92
2N3393
2N3702
BC338/BC328
2N3391A
2N3392
PN3565
2N4124
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mt4c1004
Abstract: No abstract text available
Text: A SÌ y M S ' l f \ : Si MI* 0 \ | 5 . < I O f l j , \ !* GUIDE R ^ F F R F N C F AUSTIN SEMICONDUCTOR APPROVED SM D’S Continued) SMD ASI PART NUMBER MT4C4067 MT4C1004 MT4C1001 MT4C4256 PACKAGE TYPE (t) SPEED (its) PART NUMBER C CN EC 100 120 150 9213201
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MT4C4067
MT4C1004
MT4C100
MT4C1001
MT4C4256
DS000046
mt4c1004
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STP5661
Abstract: No abstract text available
Text: tt < mi o fr BIPOLAR N P N P O W E R TR A N SISTO R S PEAK PACKAGE TO-254 VCE sat DEVICE bvceo «C hFE TYPE VOLTS AMPS min/m ax STP4070 STP4071 STP5622 STP5624 STP5626 STP5628 STP6274 STP6275 STP6276 STP6277 STP6338 STP6339 STP6340 STP6341 100 150 60 80
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O-254
STP4070
STP4071
STP5622
STP5624
STP5626
STP5628
STP6274
STP6275
STP6276
STP5661
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Untitled
Abstract: No abstract text available
Text: EDI8M8512C m / o \ / 90 100 120/150 The fu tu re . . . today. • ■ ■ ■ ■ ■ ■ ■ ■ ■ ü H M Module H H B e OKIIFÛI^MIÂTÔÛINI 512Kx8 SRAM CMOS, High Speed Module Features The EDI8M8512C is a 4096K 512Kx8 bit High Speed Static RAM module constructed using four
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EDI8M8512C
512Kx8
EDI8M8512C
4096K
EDI88128C
128Kx8)
128Kx8
32-pin,
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Untitled
Abstract: No abstract text available
Text: STANDARD LLD LAMPS R E C T A N G U L A R T Y P E S Chip 'ackage Part No. E mi t t e d <. '>ior BL-R1132N Il M 655 Red Diffused 40 no 40 200 1.7 2.0 0.8 125 Bright Red 700 Red Diffused 90 50 15 50 2.2 2.6 1.0 125 Hi-Kff Red 635 Red Diffused 45 100 30 150
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20tnA)
BL-Rxx34
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Untitled
Abstract: No abstract text available
Text: ASP-22125-02 3.0 50 .075 .1000 NOTES: 1. SUB A S P T E R MI N A L & ADD TSS 2. P A R T S TO BE B U L K P A C K A G E D . REF TO TAI LS. REF REF rr .365 .075 BODY REF — 1 - 3 . 1 5 0 30 POSI TI ONS REF x .100 -+ .250 .150
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ASP-22125-02
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Untitled
Abstract: No abstract text available
Text: R@£5C= £ 0 0 011 □HMO + / - 107. NTC =- 3 , 97./C CURVE Y OPERATING RANGE 1-55 TO 15 0 C ETEPAGE RANGE1-G5 TE 150 E ^THERMAL TIME C DN UT ANT i 8 TEC MAX £ D 15 5 IP A T I □ N C □ N5 T A NT :£ n W/ C MI N FEWER R A T I N G i , £5W@£5 C , DERATE TE 100
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Untitled
Abstract: No abstract text available
Text: ER85C : 5 0 0 0 OHM: + / - 2 X PTC ; , 7%/C □ P E F:AT I NG F:A I",IGE : - 5 5 TO 10 0 C 5TERAGE R A N G E - b 5 TG 150 C ^THERMAL TIME CGNCTANT:30 CEL, MAX * DI 5 5 1p A T I □ N C E N5 T A NT : P , 5 n W/ C MI N FEWER R A T I N G : , E5W885 C ,D E RA TE TG 100
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ER85C
E5W885
S05-50EG
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Untitled
Abstract: No abstract text available
Text: E R 85C : 5 0 0 0 OHM: + / - 107. PTC ; , 7 %/C □ P E F: AT I NG F: AI",IGE : - 5 5 TO 10 0 C 5TERAGE R A N G E - b 5 TG 150 C ^THERMAL T I M E CGNCTANT:30 CEL, MAX * DI 5 5 1p AT I □ N CE N5 T ANT : P , 5 n W/ C MI N FEWER R A T IN G : , 85W885 C ,D E R A TE TG 100
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Untitled
Abstract: No abstract text available
Text: E R 85C : 5 0 0 0 OHM: + / - 5X PTC ; , 7 %/C □ P E F: AT I NG F: AI",IGE : - 5 5 TO 10 0 C 5TERAGE R A N G E - b 5 TG 150 C ^THERMAL T I M E CGNCTANT:30 CEL, MAX * DI 5 5 1p AT I □ N CE N5 T ANT : P , 5 n W/ C MI N FEWER R A T IN G : , 85W885 C ,D E R A TE TG 100
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309T
Abstract: PA05A PA05
Text: - • APEX f t k ‘Æ f t i T r =25°C mi s sQ ^ 5e ft # & ft % nL ^ I Virc V) 1 m je (/\'C • 7t UU r- - v, y\-f PA05, P A 0 5 A Vcc 1 100 V Ao £ ft + 15— + 5 0 V Vo T,pcr Io = 20 A HY B + Vs V 250 w mA Icc T opi — 5 5 ~ + 125 Tstg — 6 5 — + 150
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PA05A
PA05A
100kHz
470pF
220pF
100pF
309T
PA05
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Untitled
Abstract: No abstract text available
Text: Rla!2 5 C ! 5 0 0 □ HM:I: + /-2X PTC : , 7/1/L □ P E F:A T I NG F:A NGE : - 5 5 T E 10 0 C GTERAGE R A N G E - b 5 TE 150 C ^THERMAL TIME G E N E T A N T:30 CEE, MAX * DI 5 GI F' A T I □ N C E NGT A NT : E , 5 n W/ C MI N FEWER R A T I N G : , E5WEE5 C ,D E RA TE TE 100
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Untitled
Abstract: No abstract text available
Text: E E 2 5 E 15 0 OHM: +/-3/1 PTC ; , 7/1/L □ P E P A T I NG F:A NGE : - 5 5 T □ 100 C ETDEAEE PANCE :-0 5 TE 150 E +THEPMAL TIME C E N 5 T A N T : 30 GEL MAX * D I 5 5 1P A T I E N 15E N5 T A NT ! E , 5 n W/ E MI N F'EWEF: F A T I N E ¡ , E 5 W E E 5 E , I E E A T E TE ICn
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Untitled
Abstract: No abstract text available
Text: R e S S C i 1 0000 EMME + / - 5 X PTC ; , 7/1/0 □ FORATI NG F: A NGE : - 5 5 T □ 100 C E T E F A E E RANCE : - 0 5 TE 150 C +THEPMAP TIMO CDNCTANT: 3 0 CEO, MAX, * D I 3 3 1P A T I E PI C E N3 T A PI T ! 3 , 5 mW/ 3 MI PI F'EWER F A T IN E ¡ ,E 5 W E E 5 E , DERATE TE 10i
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L-F-RGG48
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Untitled
Abstract: No abstract text available
Text: R e s s e 14700 EHM5 +/-107. PTC ; , 7/1/0 □F O R A T I N0 F: A N0 0 : - 5 5 T □ 100 C CTOPAGG RANCE : - 05 TE 150 0 +THEPMAL TI MO C DNCTANT: 3 0 CEO, MAX * D I 3 3 I P A T I D N C E N C T A N T : 3 , 5 mW/3 MI N P EWER R A T I N E : , 35W3E5 3 , B F P A T F TE ICn
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L-R-23643
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Untitled
Abstract: No abstract text available
Text: P P 2 5 C : 3 0 0 OHM: +/-3/1 PTC ; , 7/1/L □P E P A T I NG F: A NG E : - 5 5 T □ 100 E: CTERAGE RANCE : - 05 TE 150 C * T HE R MAL T I M E C E N C T A N T : 3 0 3EC MAX * D I 3 3 1P A T I E N IOE NC T A NT ! 3 , 5 n W/ 3 MI N F'EWEF: R A T I N G ¡ , 3 5 W 3 E 5 3 , DE R AT E TE ICn
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L-R-GGG43
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Untitled
Abstract: No abstract text available
Text: Rla!2 5 G ! b 8 0 GHMC +/-2 /1 PTC : , 7/1/L □ P E P A T I NG F: A NG E : - 5 5 T □ 100 C C T E F A E E RANCE : - 0 5 T E 150 C +THEPMAL T I M E C G NC T A NT ; 30 GE L MAX * D I G GI p A T I E N L'E NG T A NT ! E , 5 n W/ C MI N PEWER F A T I N E ¡ , G 5 W E E 5 E , D E F A T E T E 1 0 i
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FATING25WG25
-22b43
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