MICRON Search Results

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

tc183

Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
Contextual Info: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core

TC160G33

Abstract: TC160G11 TC160G22 TC160G16 TC160G70 TC140G TC160G
Contextual Info: TOSHIBA T O S H I B A A M E R I C A E L E C T R O N IC C O M P O N E N T S , I N C . Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series o p e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have

low noise pseudomorphic

Contextual Info: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE

Contextual Info: ] j P E R I C O M 16-Bit Transparent D-Type Latch with 3-State Outputs Product Features Product Description • The PI74VCX Family is designed for low voltage operation, V dd = 1.8V to 3.6V Pericom Semiconductor’s PI74VCX series of logic circuits are produced in the Company’s advanced 0.35 micron CMOS

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

Contextual Info: SGA-4563 Z SGA-4563(Z) DC to 2500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-4563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

N25Q256

Contextual Info: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection

CDFP4-F16

Abstract: HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS
Contextual Info: HCTS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ)

SO56-2

Contextual Info: IDT54/74FCT162701T/AT FAST CMOS 18-BIT READ/WRITE BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES FAST CMOS 18-BIT READ/WRITE BUFFER DESCRIPTION: FEATURES: − − − − − − − − − − − − − − IDT54/74FCT162701T/AT 0.5 MICRON CMOS Technology

EPA240D

Contextual Info: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

2012 ics class X date sheet

Abstract: HCS32D HCS32DMSR HCS32HMSR HCS32K HCS32KMSR HCS32MS
Contextual Info: HCS32MS Radiation Hardened Quad 2-Input OR Gate September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

HCS109MS

Abstract: CDFP4-F16 HCS109DMSR HCS109HMSR HCS109KMSR HCS109
Contextual Info: HCS109MS Radiation Hardened Dual JK Flip Flop September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

MT48LC4M32B2P

Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
Contextual Info: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive

MT48LC2M32B2P

Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
Contextual Info: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

ALVC126

Abstract: IDT74ALVC126
Contextual Info: IDT74ALVC126 3.3V CMOS QUADRUPLE BUS BUFFER GATE EXTENDED COMMERCIAL TEMPERATURE RANGE 3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS IDT74ALVC126 ADVANCE INFORMATION DESCRIPTION: FEATURES: – – 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015;

HCS164DMSR

Abstract: HCS164HMSR HCS164KMSR HCS164MS
Contextual Info: HCS164MS Radiation Hardened 8-Bit Serial-In/Parallel-Out Register September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)

CDFP4-F16

Abstract: HCS193DMSR HCS193HMSR HCS193KMSR HCS193MS
Contextual Info: HCS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)

513 s12 datasheet

Abstract: EPA060BV EPA060B
Contextual Info: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET  • • • • • • • •  +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE

mt48lc32m16a2p-75

Abstract: MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c
Contextual Info: 512Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Options • PC100- and PC133-compliant

BI resistor network

Abstract: PLL650-05SC PLL650-05SC-R
Contextual Info: PLL650-05 Low EMI Network LAN Clock FEATURES • • • • • • • Full CMOS output swing with 40-mA output drive capability. 25-mA output drive at TTL level. Advanced, low power, sub-micron CMOS processes. 25MHz fundamental crystal or clock input. 3 fixed outputs of 25MHz, 75Mhz and 125Mhz with

HCTS86D

Abstract: HCTS86DMSR HCTS86HMSR HCTS86K HCTS86KMSR HCTS86MS
Contextual Info: HCTS86MS TM Radiation Hardened Quad 2-Input Exclusive OR Gate October 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)

vw 9a engines

Abstract: ACTS373DMSR ACTS373HMSR ACTS373KMSR ACTS373MS
Contextual Info: ACTS373MS Radiation Hardened Octal Transparent Latch, Three-State April 1995 Features Pinouts 20 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T20, LEAD FINISH C TOP VIEW • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD Si • Single Event Upset (SEU) Immunity

HCTS245DMSR

Abstract: HCTS245HMSR HCTS245KMSR HCTS245MS
Contextual Info: HCTS245MS TM Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T20 TOP VIEW • Total Dose 200K RAD (Si)