MICRON 63 Search Results

dram structure

Abstract: 2240 6T SRAM micron sram
Contextual Info: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

nd02d2

Contextual Info: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design

Infineon automotive semiconductor technology roadmap

Abstract: Infineon technology roadmap micron sram
Contextual Info: Joint News Release by Infineon Technologies and Micron Technology Infineon and Micron Announce Partnership to Develop Reduced Latency DRAM Munich, Germany / Boise, Idaho, USA – May 30, 2001 – Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced that

dram 88 pin

Contextual Info: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

toshiba tc110g

Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective

pic 8259

Abstract: sus_stat_n rtc backup battery circuit 2h48
Contextual Info: PRELIMINARY‡ MT8LLN22NCNE COPPERTAIL 21PAD/22NCN Chipset Overview MT8LLN22NCNE Peripheral Bus Controller For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. GENERAL DESCRIPTION The Micron 21PAD/22NCN chipset consists of two

Contextual Info: 4’8 MEGx32 MICRON* I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View

Contextual Info: MICRON 8’16’ 32 M EGx72 I BUFFERED DRAM DIMMs n o AM LJ 11 M lV I MT9LD T 872(F) X, MT18LD(T)1672(F) X, MT36LD(T)3272(C)(F) X H n •■■ Itfl C j | J I I I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

MwT-273

Contextual Info: MwT-2 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM FEATURES 50 50 • 9 dB SMALL SIGNAL GAIN AT 12 GHz • +24.5 dBm OUTPUT POWER AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH • CHOICE OF CHIP AND THREE PACKAGE TYPES

Contextual Info: MwT-15 26 GHz Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • +24 dBm POWER OUTPUT AT 12 GHz • 9.5 dB SMALL SIGNAL GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 35 52 35 50 52 775 35

SOLAR TRANSISTOR

Abstract: MwT-H15
Contextual Info: MwT-H15 38 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • 27 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 52 35 50 35 52 775

XP018

Contextual Info: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single

Contextual Info: MICRON I 1, 2 MEG x 32 SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT132U, MT4LSDT232UD SYNCHRONOUS DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View

Contextual Info: Micron Confidential and Proprietary Advance‡ 256MB, 512MB, 1GB x64, DR : 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT8HSF3264HD – 256MB MT8HSF6464HD – 512MB MT8HSF12864HD – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com/ddr2

Semefab Scotland

Abstract: CMOS Process 3um semefab
Contextual Info: PPS 403 3 Micron Silicon Gate, Opto CMOS Process Preliminary Data Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 403 is an industry standard, mixed signal, precise analogue process. This 3 Micron, P-Well process features optional double polysilicon capacitors. The

Contextual Info: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with

MT9M001

Abstract: MT9M001C12STM mps 0851 312H 48 pin clcc MT9M001C12
Contextual Info: MT9M001: 1/2-Inch Megapixel Digital Image Sensor Features 1/2-Inch Megapixel CMOS Digital Image Sensor MT9M001C12STM Monochrome For the latest data sheet, refer to Micron’s Web site: www.micron.com\imaging Features Table 1: • Micron DigitalClarity CMOS imaging technology

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

MT9M001

Contextual Info: PRELIMINARY‡ 1/2-INCH 3 MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 3-MEGAPIXEL CMOS DIGITAL IMAGE SENSOR MT9T001 Features Description Micron Part Number: MT9T001P12STC Micron Imaging’s MT9T001 is a QXGA-format ½inch CMOS active-pixel digital image sensor. The

MT9M001

Abstract: ST Micron, mold compound cmos mt9t001 cmos COL33 X1536
Contextual Info: PRELIMINARY‡ 1/2-INCH 3 MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 3-MEGAPIXEL CMOS DIGITAL IMAGE SENSOR MT9T001 Features Description Micron Part Number: MT9T001P12STC Micron Imaging’s MT9T001 is a QXGA-format ½inch CMOS active-pixel digital image sensor. The

Contextual Info: 8,16, 32 MEG X 72 NONBUFFERED DRAM DIMMs MICRON I TECHNOLOGY, INC. MT9LD872A X, MT18LD1672A X, MT36LD3272A X DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View