RPP1K1 Search Results

RPP1K1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CMOS Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model Contextual Info: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate	Original	XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model	PDF
rpp1k1 Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate	Original	XT018 XT018 18-micron rpp1k1	PDF
0.18 um CMOS Abstract: CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz Contextual Info: 0.18 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XC018 RF CMOS Modular 0.18 µm CMOS process available for RF and mixed-signal/analog applications Module Overview CORE MOSST Poly Gate Cross Section Standard 1.8V MOS module MOSLP Low power 1.8V MOS module	Original	XC018 IMD35 0.18 um CMOS CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz	PDF

Catalog Datasheet

Type

Document Tags

PDF

CMOS

Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
Contextual Info: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate

Original

XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model

PDF

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

Original

XT018 XT018 18-micron rpp1k1

PDF

0.18 um CMOS

Abstract: CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz
Contextual Info: 0.18 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XC018 RF CMOS Modular 0.18 µm CMOS process available for RF and mixed-signal/analog applications Module Overview CORE MOSST Poly Gate Cross Section Standard 1.8V MOS module MOSLP Low power 1.8V MOS module

Original

XC018 IMD35 0.18 um CMOS CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz

PDF