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    MICRON RESISTOR MOS Search Results

    MICRON RESISTOR MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MICRON RESISTOR MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMOS Process Family

    Abstract: 0.6 um cmos process
    Text: 4 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 8 µm Poly and Metal Pitch 10 Volts Maximum Operating Voltage 15 Volts High Voltage Option Isolated Vertical PNP Bipolar Module Low TCR Resistor Module


    Original     		PDF -10mA CMOS Process Family 0.6 um cmos process

    micron resistor TCR

    Abstract: CMOS Process Family micron resistor 1.2 Micron CMOS Process Family
    Text: 5 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 10 µm Poly and Metal Pitch • Low TCR Resistor Module Description The Mitel 5µm process is a double poly/double metal CMOS process with an operating voltage range from


    Original     		PDF 50x50 micron resistor TCR CMOS Process Family micron resistor 1.2 Micron CMOS Process Family

    P-MOSFET

    Abstract: mosfet 4800 micron resistor 0.6 um cmos process 3-Micron-CMOS-Process 4800 mosfet MOSFET dynamic parameters 1.2 Micron CMOS Process Family
    Text: 3 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 6 µm Poly Pitch; 7 µm Metal Pitch • 7 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 10 Volts High Voltage Option • Low TCR Resistor Module


    Original     		PDF

    DDR2 routing Tree

    Abstract: SODIMM ddr2 micron resistor raw card DDR2 SODIMM raw card b RCD Components PC2-3200 PC2-6400 RCD module
    Text: TN-47-17: DDR2 SODIMM Optimized Address/Command Nets Introduction Technical Note DDR2 SODIMM Optimized Address/Command Nets Introduction DDR2 small-outline dual in-line memory modules SODIMMs have several basic module configurations and a number of complex topologies. Operating speeds range from


    Original     		PDF TN-47-17: PC2-3200 PC2-6400 x16-based 09005aef8194aff8/Source: 09005aef8194b02a TN4717 DDR2 routing Tree SODIMM ddr2 micron resistor raw card DDR2 SODIMM raw card b RCD Components RCD module

    micron resistor

    Abstract: micron power resistor RLDRAM micron 3*3 resistor
    Text: TN-49-02: Exploring the RLDRAM II Feature Set Introduction Technical Note Exploring the RLDRAM II Feature Set Introduction With network line rates steadily increasing, memory density and performance are becoming extremely important in enabling network processors to perform packet


    Original     		PDF TN-49-02: 09005aef810cb115/Source: 09005aef8108a30d TN4902 micron resistor micron power resistor RLDRAM micron 3*3 resistor

    micron memory model for ddr3

    Abstract: ADP3182 DDR2-667 DDR3-1333 HIP6311 micron resistor tn4722
    Text: TN-47-22: Designing for LV FBDIMMs Introduction Technical Note Designing for 1.5V, Low-Power FBDIMMs Introduction Today’s memory power usage may have an adverse effect on the overall system level power and server cooling requirements. This document discusses memory power


    Original     		PDF TN-47-22: 09005aef832a92e7/Source: 09005aef832a92c2 tn4722 micron memory model for ddr3 ADP3182 DDR2-667 DDR3-1333 HIP6311 micron resistor

    DDR2 layout guidelines

    Abstract: micron DDR2 pcb layout DDR2 sdram pcb layout guidelines 92-Ball DDR2 routing Tree TN-47-08 DDR2 layout fbga Substrate design guidelines tn4720 TN-47-20
    Text: TN-47-20: Point-to-Point Package Sizes and Layout Basics Introduction Technical Note DDR2 Point-to-Point Package Sizes and Layout Basics Introduction Point-to-point designers face many challenges when laying out a new printed circuit board (PCB). The designer may need to arrange groups of devices within a certain area


    Original     		PDF TN-47-20: TN4720 09005aef822d14b5/Source: 09005aef822641f0 DDR2 layout guidelines micron DDR2 pcb layout DDR2 sdram pcb layout guidelines 92-Ball DDR2 routing Tree TN-47-08 DDR2 layout fbga Substrate design guidelines TN-47-20

    TN-46-14

    Abstract: micron DDR2 pcb layout TN-46-02 TN-46-11 TN-46-19 TN4614 tn4619 TN46-14 TN4611 hspice
    Text: TN-46-19: LPSDRAM Unterminated Point-to-Point System Design Introduction Technical Note LPSDRAM Unterminated Point-to-Point System Design: Layout and Routing Tips Introduction Low-power LP SDRAM, including both low-power double data rate (LPDDR) and lowpower single data rate (LPSDR), devices require a well-designed environment, package,


    Original     		PDF TN-46-19: 09005aef83707700/Source: 09005aef837076df tn4619 TN-46-14 micron DDR2 pcb layout TN-46-02 TN-46-11 TN-46-19 TN4614 TN46-14 TN4611 hspice

    micron DDR2 pcb layout

    Abstract: Micron TN-47-01 TN-47-01 ps1010 DDR2 layout guidelines DDR2 DIMM DDR2-533 ddr2 controller tdv and tdqsq signal path designer
    Text: TN-47-01 DDR2 DESIGN GUIDE FOR TWO-DIMM SYSTEMS Overview Technical Note DDR2-533 Memory Design Guide for Two-DIMM Unbuffered Systems Overview DDR2 memory busses vary depending on the intended market for the finished product. Some products must support four or more registered DIMMs, while some are point-topoint topologies. This document focuses on solutions requiring two unbuffered DIMMs


    Original     		PDF TN-47-01 DDR2-533 09005aef80cc3dce micron DDR2 pcb layout Micron TN-47-01 ps1010 DDR2 layout guidelines DDR2 DIMM ddr2 controller tdv and tdqsq signal path designer

    ATF-34143

    Abstract: No abstract text available
    Text: Low Noise Amplifiers for 1500 MHz through 2500 MHz using the ATF-34143 Low Noise PHEMT Preliminary Applications Information [Version 34143e.doc dated 06-10-99] _ _ Introduction Hewlett Packard’s ATF-34143 is a low noise PHEMT designed for use in low cost commercial


    Original     		PDF ATF-34143 34143e OT-343) amplifier43

    intel Socket 775 VID VTT

    Abstract: 775 MOTHERBOARD CIRCUIT diagram intel 775 motherboard diagram socket AM2 pinout socket pga370
    Text: Intel Pentium® III Processor Based on 0.13 Micron Process Up to 1.33 GHz Datasheet • ■ ■ ■ ■ ■ ■ ■ Available at 1.0, 1.13, 1.20, 1.33 GHz. System bus frequency at 133 MHz 256 KB Advanced Transfer Cache on-die, full speed Level 2 (L2 cache with Error


    Original     		PDF

    80526PZ600256

    Abstract: l440gx manual PGA370
    Text: Intel Pentium® III Processor Based on 0.13 Micron Process Up to 1.33 GHz Datasheet • ■ ■ ■ ■ ■ ■ ■ Available at 1.0, 1.13, 1.20, 1.33 GHz. System bus frequency at 133 MHz 256 KB Advanced Transfer Cache on-die, full speed Level 2 (L2 cache with Error


    Original     		PDF s/133 533BMHz 512-KB Cache/133 500EMHz 256-KB Cache/100 500MHz 80526PZ600256 l440gx manual PGA370

    INTEL 845 MOTHERBOARD CIRCUIT diagram

    Abstract: 845 MOTHERBOARD CIRCUIT diagram PC MOTHERBOARD intel 845 circuit diagram PC 845 MOTHERBOARD VOLTAGE diagram PC 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD CIRCUIT 845 MOTHERBOARD CIRCUIT MANUAL 845 MOTHERBOARD diagram 845 intel chipset motherboard circuit 478 SOCKET PINOUT
    Text: R Intel Pentium® 4 Processor in 478-pin Package and Intel® 845/845E/845G/845GL/845GV/ 845GE/845PE Chipset Platform Design Guide Addendum For Support with Intel® Celeron® D Processor in 478-pin Package August 2004 Revision 1.1 Document Number: 303011-002


    Original     		PDF 478-pin 845/845E/845G/845GL/845GV/ 845GE/845PE 512-KB 478Pin INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram PC MOTHERBOARD intel 845 circuit diagram PC 845 MOTHERBOARD VOLTAGE diagram PC 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD CIRCUIT 845 MOTHERBOARD CIRCUIT MANUAL 845 MOTHERBOARD diagram 845 intel chipset motherboard circuit 478 SOCKET PINOUT

    TN-46-11

    Abstract: TN4611
    Text: TN-46-11: DDR Simulation Process Introduction Technical Note DDR SDRAM Point-to-Point Simulation Process Introduction This technical note covers rarely addressed areas of the DDR SDRAM point-to-point simulation process: 1. Signal integrity 2. Board skew and the contributing factors


    Original     		PDF TN-46-11: 09005aef812507c7 TN4611 TN-46-11

    LL1608-F2N7S

    Abstract: ATF34143 ATF-34143 601706 atf 36163 Low Noise Amplifier fet amplifier schematic schematic diagram DC amplifier 0805CS ATF-35143 ATF-36163
    Text: High Intercept Low Noise Amplifiers for 1500 MHz through 2500 MHz using the ATF-34143 Low Noise PHEMT Application Note 1175 Introduction Biasing Options and Source Grounding Agilent Technologies’ ATF-34143 is a low noise PHEMT designed for use in low cost commercial applications in


    Original     		PDF ATF-34143 ATF-34143 SC-70 OT-343) AV01-xxxxEN LL1608-F2N7S ATF34143 601706 atf 36163 Low Noise Amplifier fet amplifier schematic schematic diagram DC amplifier 0805CS ATF-35143 ATF-36163

    ATF34143

    Abstract: ATF-35143 ATF-34143 ATF35143 ATF-36163 LL1608-F2N7S LL1608-F3N3K MICROWAVE EESof
    Text: High Intercept Low Noise Amplifiers for 1500 MHz through 2500 MHz using the ATF-34143 Low Noise PHEMT Application Note 1175 Introduction Agilent Technologies’ ATF-34143 is a low noise PHEMT designed for use in low cost commercial applications in the VHF through


    Original     		PDF ATF-34143 ATF-34143 ATF34143 SC-70 OT-343) ATF-35143 ATF35143 ATF-36163 LL1608-F2N7S LL1608-F3N3K MICROWAVE EESof

    Untitled

    Abstract: No abstract text available
    Text: USI6000 SERIES ANALOG/DIGITAL CMOS SYSTEMS-ON-A-CHIP UNIVERSAL SEMICONDUCTOR THE CONCEPT MOS VLSI technology has ushered in an era of increased integration capability. The push is on to combine more and more circuitry, analog, as well as digital, onto a single integrated circuit. Prior


    OCR Scan     		PDF USI6000 samplP14 USI6006-10-P20 USI6006-14-P24 USI6006-15-P20 USI6006-24-P20 USI6006-25-P22 USI6006-26-C20 USI6006-27-C20 USI6006-28-P16

    USI6000

    Abstract: USI-6003 USI-6000 ANalog Devices Quad Opamp USI-6001 Universal Semiconductor transistors ON Semiconductor
    Text: UNIVERSAL SEMICONDUCTORS HE 0 I T3ba341 QOOOOS5 b | USI6000 SERIES ANALOG/DIGITAL CMOS SYSTEMS-ON-A-CHIP “T- 4 ;l- ‘ UNIVERSAL SEMICONDUCTOR THE CONCEPT MOS VLSI technology has ushered in an era of increased integration capability. The push is on to combine more and more circuitry, analog, as well as digital, onto a single integrated circuit. Prior


    OCR Scan     		PDF T3ba341 USI6000 USI6006-15-P20 USI6006-25-P22 USI6006-26-C20 USI6006-27-C20 USI6006-28-P16 USI6006-29-P16 USI6006-30-P40 US111/88) USI-6003 USI-6000 ANalog Devices Quad Opamp USI-6001 Universal Semiconductor transistors ON Semiconductor

    TTL 7466

    Abstract: B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY
    Text: S-Î1 0 S SYSTEMS INC SbE D • OQOlSlb 331 « S Î I O SLA9000PIUS Series CMOS HIGH SPEED GATE ARRAYS ■ DESCRIPTION The S-MOS SLA9000Plus series is a family of sea-of-gate arrays manufactured on S-MOS’ state-of-the-art 1.0 micron double-metal SiCMOS process. This series has been designed for high I/O, medium gate count designs


    OCR Scan     		PDF SLA9000PIUS SLA9000Plus F240-16 TTL 7466 B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY

    T157WG

    Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
    Text: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and


    OCR Scan     		PDF GG01522 SLA10000 SSC5000 B8259 B8237 B82284 B8255 T157WG S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE

    S-MOS navnet

    Abstract: S-MOS asic B16c F1841
    Text: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel


    OCR Scan     		PDF SLA9000 SLA9000 S-MOS navnet S-MOS asic B16c F1841

    B8228

    Abstract: No abstract text available
    Text: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8


    OCR Scan     		PDF SLA10000 SLA10000 B8228

    CMOS op-amp

    Abstract: No abstract text available
    Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 1 HIGH PERFORMANCE, HIGH RELIABILITY, CMOS ARRAY FAMILY


    OCR Scan     		PDF USI-6000 CMOS op-amp

    USI6000

    Abstract: MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister
    Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF USI-6000 C31G33 USI6000 MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister