MICRON RESISTORS Search Results
MICRON RESISTORS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TMP392A2DRLR |
|
TMP392 dual-channel (hot & warm), resistor-programmable temperature switch |
|
|
|
| TMP392A3DRLR |
|
TMP392 dual-channel (hot & warm), resistor-programmable temperature switch |
|
|
|
| TIPD128 |
|
Capacitive Load Drive Verified Reference Design Using an Isolation Resistor |
|
||
| TPS2066DGN-1 |
|
Current-Limited, Power-Distribution Switches with Output Discharge resistor 8-MSOP-PowerPAD -40 to 85 |
|
|
|
| TMP708AIDBVR |
|
Resistor-Programmable Trip Point Temperature Switch 5-SOT-23 -40 to 125 |
|
|
MICRON RESISTORS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
XH018Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron |
Original |
XH018 XH018 18-micron | |
nd02d2Contextual Info: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design |
OCR Scan |
VGC450/VGC453 VGC450/453 nd02d2 | |
micron sramContextual Info: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first |
Original |
35-MICRON 25-Micron CY7C1021, 35-micron ahe10 micron sram | |
m25p40vmb6txx
Abstract: M25PX64 M25P40-VMB6 M25P UID M25P40 JESD22-A114A M25P vdfpn8 MLP8 VDFPN8 package
|
Original |
M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; m25p40vmb6txx M25PX64 M25P40-VMB6 M25P UID JESD22-A114A M25P vdfpn8 MLP8 VDFPN8 package | |
rpp1k1Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate |
Original |
XT018 XT018 18-micron rpp1k1 | |
toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
|
OCR Scan |
||
208-MIL
Abstract: mlp8 numonyx
|
Original |
M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; 208-MIL mlp8 numonyx | |
|
Contextual Info: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx |
Original |
M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; | |
|
Contextual Info: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx |
Original |
M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; | |
M25P40-VMB6
Abstract: 208-MIL 208mils MLP8 package M25P40-VMW6G
|
Original |
M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40-VMB6 208-MIL 208mils MLP8 package M25P40-VMW6G | |
|
Contextual Info: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx |
Original |
M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; | |
M25P
Abstract: M25P40vmn6p M25PX64 mlp8 micron VFQFPN8
|
Original |
M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P M25P40vmn6p M25PX64 mlp8 micron VFQFPN8 | |
PT6042
Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
|
OCR Scan |
VGC450/VGC453 VGC453 VGC450 PT6042 model values for 0.18 micron technology cmos nd02d2 | |
integrated circuit TL 2262
Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
|
OCR Scan |
VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology | |
|
|
|||
PT6045
Abstract: VSC370 PT6005
|
OCR Scan |
VSC370 85-micron 000fiö T-42-41 PT6045 PT6005 | |
130 nm CMOS standard cell library
Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
|
OCR Scan |
VGC450/VGC453 VGC453 VGC450 130 nm CMOS standard cell library 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 | |
VGT300039
Abstract: PT6045 VGT300022 PT6005
|
OCR Scan |
T3flfl34? VGT350/VGT353 85-micron VGT350/353 VGT300039 PT6045 VGT300022 PT6005 | |
MwT-273
Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
|
OCR Scan |
QQQ0S51 MwT-273 mwt 871 MwT-270 sii 021 s-parameter MWT273HP | |
F4029Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally |
OCR Scan |
651-67Q0 F4029 | |
PT6042Contextual Info: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon |
OCR Scan |
T3flfl347 VSC450 T-42-41 PT6042 | |
m25p16-vmn3pb
Abstract: marking 000c m25p16vmf
|
Original |
M25P16 M25P16-V6D11, M25P16-VMF3PB, M25P16-VMN3PB, M25P16-VMN6P, M25P16-VMP6G, M25P16S-VMN6P, 512Kb 09005aef8456656c m25p16-vmn3pb marking 000c m25p16vmf | |
vdfpn8Contextual Info: Micron M25P16 Serial Flash Embedded Memory Features Micron M25P16 Serial Flash Embedded Memory M25P16-V6D11, -VMC6G, -VMC6TG M25P16-VMF3PB, -VMF3TPB, -VMF6PBA M25P16-VMN3PB, -VMN3TPB M25P16-VMN6P, -VMN6PBA, -VMN6TP, -VMN6TPBA M25P16-VMP6G, -VMP6TG, -VMW6G, -VMW6TG |
Original |
M25P16 M25P16-V6D11, M25P16-VMF3PB, M25P16-VMN3PB, M25P16-VMN6P, M25P16-VMP6G, M25P16S-VMN6P, 512Kb 09005aef8456656c vdfpn8 | |
M25P16-VMN6P
Abstract: mlp8 numonyx m25p16-vmn3pb M25P16-V6D11 M25P application note m25p16vmf
|
Original |
M25P16 M25P16-V6D11, M25P16-VMF3PB, M25P16-VMN3PB, M25P16-VMN6P, M25P16-VMP6G, M25P16S-VMN6P, 512Kb 09005aef8456656c M25P16-VMN6P mlp8 numonyx m25p16-vmn3pb M25P16-V6D11 M25P application note m25p16vmf | |
M25P SO8WContextual Info: Micron M25P16 Serial Flash Embedded Memory Features Micron M25P16 Serial Flash Embedded Memory M25P16-V6D11, -VMC6G, -VMC6TG M25P16-VMF3PB, -VMF3TPB, -VMF6PBA M25P16-VMN3PB, -VMN3TPB M25P16-VMN6P, -VMN6PBA, -VMN6TP, -VMN6TPBA M25P16-VMP6G, -VMP6TG, -VMW6G, -VMW6TG |
Original |
M25P16 M25P16-V6D11, M25P16-VMF3PB, M25P16-VMN3PB, M25P16-VMN6P, M25P16-VMP6G, M25P16S-VMN6P, 512Kb 09005aef8456656c M25P SO8W | |