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UES1102SM

Contextual Info: ISCFdÈ1^Us1^Us text/html About News Contact keyword search: UES1102SM #16636 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 100 V Max Forward Surge Current

Zener Voltage Regulator

Abstract: voltage regulator diode
Contextual Info: 1PMT5918e3/TR7 | Microsemi Quality Careers Investors Contact Us Search Parametric Search Products Applications Design Support Ordering Company Home › Products › Product Directory › Discrete Power And Small Signal Products › Zeners › Zener Voltage Regulator Diode

u3g diode

Abstract: diode 227j UM-49 Unitrode Semiconductor diode u3g
Contextual Info: MICROSEMI CORP/ WATERTOWN 5DE » • TBMTTbB 001E3T0 Tbfl ■ U N I T PIN DIODE U M 4000SERIES UM4900 S E R IE S O 7 - f 5~~ Features • • • • Power dissipation to 37.5W Voltage ratings to 1000V Series resistance rated at 0.5Q Carrier lifetim e greater than 5/us

AN-17

Abstract: JESD79 LX1671 LX1672 LX1672-03CLQ LX1673 Si4842DY JESD89A
Contextual Info: AN-17 DDR SDRAM Memory Termination AN-17 USING THE LX1672 AND LX1673 FOR DDR SDRAM MEMORY TERMINATION LX1672 Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2002 Revision 1.2b, 3/8/2006 P R O D U C T S Microsemi Integrated Products

capacitor 2D

Abstract: AN18 LX1671 Si4842DY
Contextual Info: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2d, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

5a2 zener diode

Abstract: AN19 LX1671 LX1672 Si4842DY
Contextual Info: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2a, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Contextual Info: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  5 Volt Read and Write. 5V ± 10% Supply.  Packaging:  Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 .  Data# Polling and Toggle Bit feature for detection of

Contextual Info: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  5 Volt Read and Write  Packaging:  Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 .  Data# Polling and Toggle Bit feature for detection of

Contextual Info: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  5 Volt Read and Write  Packaging:  Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 .  Data# Polling and Toggle Bit feature for detection of

Contextual Info: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH, SMD 5962-97609 FEATURES  Low Power CMOS  Data# Polling and Toggle Bit feature for detection of program or erase cycle completion.  Access Times of 90, 120, 150ns  Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 .

Contextual Info: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH SMD 5962-97609* FEATURES  Low Power CMOS  Data# Polling and Toggle Bit feature for detection of program or erase cycle completion.  Access Times of 90, 120, 150ns  Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).

Contextual Info: W764M32V1-XBX 256MB – 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

Microsemi

Contextual Info: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

W764M32V1-XBX

Contextual Info: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

Contextual Info: W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

Contextual Info: W7264M32V1-XSBX W7464M32V1-XSBX *ADVANCED 512MB 2 x 64M x 32 / 1GB (4 x 64M x 32) NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W7264M32V1-XSBX device is a 3V single power flash memory and utilizes four chips organized as 67,108,864 words. The

Contextual Info: MS29C4G48MAZAKC1-XX 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

Contextual Info: MS29C4G48MAZAKC1-XX *PRELIMINARY 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.

Contextual Info: W78M64VP-XSBX 8Mx64 NOR Flash 3.3V Page Mode Multi-Chip Package FEATURES STANDARD FLASH MEMORY FEATURES  Access Times of 110, 120ns The device requires a 3.3 volt power supply for both read and write functions. Internally generated and regulated voltages are provided

Contextual Info: UM6000 / UM6200/UM6600 POWER PIN DIODES used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave

Contextual Info: W78M32VP-XBX 8Mx32 NOR Flash 3.3V Page Mode Multi-Chip Package FEATURES GENERAL DESCRIPTION  Access Times of 110, 120ns The W78M32VP-XBX is a 256Mb, 3.3 volt-only Page Mode memory device.  Packaging The device offers fast page access times allowing high speed

UM6606

Abstract: UM6000 UM6600 UM6001 UM6002 UM6006 UM6200 microsemi sm package UM601 UMX6001B
Contextual Info: UM6000 / UM6200/UM6600 POWER PIN DIODES KEY FEATURES DESCRIPTION used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave

transient suppressor

Abstract: DLTS-12 DLTS-12A DLTS-17 DLTS-17A DLTS-24 DLTS-30 IEC61000-4-4 MIL-PRF19500 SA4 marking
Contextual Info: DLTS-5 thru DLTS-30 DATA LINE TRANSIENT SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This series of Transient Voltage Suppressor TVS devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices, unidirectional or bidirectional, common buss

Contextual Info: DLTS-5 thru DLTS-30 DATA LINE TRANSIENT SUPPRESSOR SCOTTSDALE DIVISION APPEARAN CE This series of Transient Voltage Suppressor TVS devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices, unidirectional or bidirectional, common buss