Gunn Diode
Abstract: FMCW Radar FMCW gunn diode radar module gunn diode datasheet easily tuned oscillator radar gunn diode FMCW circuit gunn diode radar FMCW Radar Module
Text: Device No / Annotation Helvetica bold 12pt Bold XXXXXX AC2001 Millimeter Wave gunn Oscillator Module DS5074 1.1 january 1999 Mitel Semiconductor has developed a low cost, state of the art Millimetre Wave Gunn diode based oscillator module that operates in the 75 to 80 GHz band, with a 1
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DS5074
Gunn Diode
FMCW Radar
FMCW
gunn diode radar module
gunn diode datasheet
easily tuned oscillator
radar gunn diode
FMCW circuit
gunn diode radar
FMCW Radar Module
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Gunn Diode
Abstract: OUTPUT POWER OF A GUNN DIODE OSCILLATOR gunn diode radar module gunn diode datasheet radar gunn diode gunn diode radar gunn diode oscillator GaAs Gunn Diode diode gunn FMCW Radar
Text: XXXXXX AC2001 Millimeter Wave gunn Oscillator Module Replaces March 1999, version DS5074-2.0 DS5074-3.0 January 2000 Features l l l l High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications l l l l
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AC2001
DS5074-2
DS5074-3
Gunn Diode
OUTPUT POWER OF A GUNN DIODE OSCILLATOR
gunn diode radar module
gunn diode datasheet
radar gunn diode
gunn diode radar
gunn diode oscillator
GaAs Gunn Diode
diode gunn
FMCW Radar
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Microwave oscillator
Abstract: microwave
Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description
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FMCW
Abstract: No abstract text available
Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 60 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description
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Abstract: No abstract text available
Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description
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gunn diode
Abstract: No abstract text available
Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description
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Abstract: No abstract text available
Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description
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128-QAM
Abstract: 128QAM gunn diode datasheet PDH/SDH 15 GHz power amplifier Output Power 37dBm parameters needed to specify noise performance of microwave amplifier mpt1420 Gunn Diode millimeter gunn diode gunn diode 2- 3Ghz
Text: Linearity Requirements for MMICs for 16 through 128QAM ETSI Compliant Radios Dr. Jim Harvey, Mimix Broadband This paper highlights some of the regulatory and operational issues which influence linearity requirements and frequency planning aspects of high frequency microwave radios used for point to point or point to multipoint systems. While in the US,
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128QAM
128-QAM
128QAM
gunn diode datasheet
PDH/SDH
15 GHz power amplifier Output Power 37dBm
parameters needed to specify noise performance of microwave amplifier
mpt1420
Gunn Diode
millimeter gunn diode
gunn diode 2- 3Ghz
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TEMEX quartz
Abstract: AT6925 AT6924-3
Text: TEMEX MICROWAVE TUNING ELEMENTS General matters A - BUSHING WITH METALLIC ROTOR Tuning elements with metallic posts are simple and straight-forward in design. Each tuning unit consists of two parts, a threaded mounting bushing and a selflocking rotor screw that won’t vibrate
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AT6924-1
AT6924-2
AT6922
TEMEX quartz
AT6925
AT6924-3
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS
Abstract: huawei microwave Antennas SC1887 thales smd 68 wispry "RF Connector" tyco instruction sheet 411 3255 HUAWEI Base Station SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR HFSO1000-12 scintera application note 104
Text: JULY2010 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com FEATURED PRODUCTS: MATERIALS,R&D SUPPORT, OSCILLATORS & SYNTHESIZERS INSIDE THIS ISSUE: Short-Range Transceiver Performance Circularly-Polarized Microwave Feed Fastest-Settling Type 2 PLL Design
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JULY2010
SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS
huawei microwave Antennas
SC1887
thales smd 68
wispry
"RF Connector" tyco instruction sheet 411 3255
HUAWEI Base Station
SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR
HFSO1000-12
scintera application note 104
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gunn diode radar module
Abstract: Gunn Diode e band
Text: MITEL AC2001 Millimeter Wave gunn Oscillator Module S E M IC O N D U C T O R DS5074 Issue 2.0 March 1999 Features • • • • High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications • • •
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AC2001
DS5074
gunn diode radar module
Gunn Diode e band
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CMD1210
Abstract: No abstract text available
Text: ALPHA IND/ CTL MICROüJAVE □565303 OQQQGMO □ r OSE D T-Ô7 - / CMD SERIES GUNN DIODES Features • Available from 4 GHz through 110 GHz • High Efficiency • Low Noise • Maximum Output Power/Frequency Levels • Pulsed Devices with Several Watts
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2.4 ghz FM RECEIVER CIRCUIT DIAGRAM
Abstract: Gunn oscillator InP gunn diode x band amplifier GaAs Gunn Diode "94 GHz" GaAs Gunn Diode 24 millimeter wave radar GaAs Gunn diode VCO x band diode detector waveguide microwave transceiver gunn diode x band radar
Text: /yfoccm Millimeter Wave Subassemblies Overview Choice of Transmission Line Media F CUTPOT In millimeter wave Integrated circuit assemblies as in conventional integrated circuit assemblies, the choice of media is a major factor in terms of technical success and cost effectiveness.
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Untitled
Abstract: No abstract text available
Text: Aftœ m Pulsed Gunn Oscillators 18-60 GHz 6 WG P Series Features Environmental • Small and Lightweight ■ Peak Output Power to SOOmW ■ Fast Rise Time These devices are designed to meet the following conditions: Description Temperature Cycle Test The high output power, excellent frequency and power stability of
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missile seeker
Abstract: AH901 Gunn oscillator InP AH904 seeker AH902
Text: AH901.AH904 InP G U N N P O W E R G E N E R A T I O N D I O D E S APPLICATIONS FEATURES hign ernciency Local oscillator links missile seeker radars 94GHz operating frequency High CW power level Low FM and AM noise DESCRIPTION M illim eter-wave InP GUNN diodes are vapor
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AH901.
AH904
94GHz
AH901
missile seeker
AH901
Gunn oscillator InP
AH904
seeker
AH902
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millimeter gunn diode
Abstract: D5018-24 GUNN OSCILLATORS Frequency Tripler varactor Parametric Varactor diodes
Text: GaAs Multiplier Diodes for Millimeter Waves Features m • Efficient Multiplication to 94 GHz ■ Millimeter W ave Packages ■ High Reliability and Space Qualified 1* % Description MTTF Determination Alpha offers a line of Gallium Arsenide multiplier varactors specifically designed for low order multiplication
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GaAs Gunn Diode "94 GHz"
Abstract: varactor diode high frequency 2.4 GHZ Gunn Diode millimeter gunn diode D5008-18 D5256-06 D5244-06 D5244-12 Parametric Varactor diodes D5244-24
Text: ALPHA INI/ SEMICONDUCTOR I48E D • O S M H U a 0001374 73T « A L P T„7-ll GaAs Multiplier Diodes for Millimeter Waves Features ■ Efficient Multiplication to 94 GHz ■ Millimeter Wave Packages ■ High Reliability and Space Qualified MTTF Determination
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millimeter wave radar
Abstract: varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
Text: MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide
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MA48700
and43
millimeter wave radar
varactor multiplier
frequency multiplier X3
millimeter gunn diode
IMPATT
MA48701A
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Untitled
Abstract: No abstract text available
Text: introduction Alpha Industries is a leading manufacturer of microwave products for a wide range of commercial and military applications from RF through millimeter waves. Included among these products is a broad array of semiconductor devices, components, and
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10 GHz gunn diode
Abstract: millimeter gunn diode
Text: AFC378 G aAs FLIP CHIP S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz typ. . Low capacitance : CT0 = 0.032 pF Extremely rugged. Passivated planar construction. High reproducibility of parasitics. A P PL IC A TI O N S
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AFC378
94GHz
26-110GHz)
AFC378
10 GHz gunn diode
millimeter gunn diode
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varactor diode capacitance measurement
Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
Text: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY
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t-07-11
MA48700
varactor diode capacitance measurement
impatt diode
Gunn diode
GaAs Gunn Diode "94 GHz"
radar gunn diode
GaAs Gunn Diode
impatt
varactor diode high frequency GHz
Gunn Diode e band
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millimeter wave radar
Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
Text: Afacm MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide
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MA48700
millimeter wave radar
DIODE ED 92
GaAs Gunn Diode 24
GaAs impatt diode W band
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