MINIMOS Search Results

F2P02

Abstract: AN569 MMDF2P02E MMDF2P02ER2 FET MARKING
Contextual Info: MMDF2P02E Power MOSFET 2 Amps, 25 Volts P–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOSt

f1n05 motorola

Contextual Info: MOTOROLA O rder this docum ent by M MDF1N05E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize M otorola’s TMOS process. These miniature surface

Contextual Info: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 02 H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA Order this document by MMSF5N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA Order this document by MMDF4C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4C 03H D Medium Power Surface Mount Products Motorola Preferred Device C om plem entary TMOS Field E ffect Transistors MiniMOS devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M M DF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA Order this document by MMDF2C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products M o to ro la P re ferre d D e vic e C om plem entary TMOS Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: MMDF2P02E Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. MiniMOSt

s1308 diode

Abstract: S1308 diode s1308 MMSF1308R2 motorola an569 thermal AN569 MMSF1308 SMD310
Contextual Info: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMSF1308 Low Power Surface Mount Products Single N-Channel MiniMOS Field Effect Transistor MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These

D4N01

Abstract: AN569 MMDF4N01HD MMSF4N01HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF4N01HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF4N01HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs

S7N03

Abstract: AN569 MMSF7N03HD MMSF7N03HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMSF7N03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMSF7N03HD Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs

S4N01

Abstract: AN569 MMSF4N01HD MMSF4N01HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMSF4N01HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMSF4N01HD Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs

F2P02

Abstract: AN569 MMDF2P02E MMDF2P02ER2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF2P02E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2P02E Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface

S3P02

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M SF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.

SA13AG

Abstract: SA5.0A SA10AG SA12AG SA15AG SA16AG SA17ARLG SA18ARLG SA20ARLG
Contextual Info: SA5.0A Series 500 Watt Peak Power MiniMOSORBt Zener Transient Voltage Suppressors Unidirectional The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener

AN569

Abstract: MMSF4205 MMSF4205R2 S4205 SMD310 AN-569
Contextual Info: MOTOROLA Order this document by MMSF4205/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMSF4205 TMOS Single P−Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs which

SA5.0A/CA

Abstract: SA10A SA11A SA12A SA13A SA14A SA15A SA16A SA170CA SA17A
Contextual Info: SA5.0A Series 500 Watt Peak Power MiniMOSORBt Zener Transient Voltage Suppressors Unidirectional* The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener

F2P02

Abstract: f2po2 AN569 MMDF2P02E MMDF2P02ER2 MMDF2P02ER2G 4Q30
Contextual Info: MMDF2P02E Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. MiniMOSt

Contextual Info: MOTOROLA Order this document by MMSF4N01 HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F 4N 01H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Single N -C hannel Field E ffect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

SA10A

Abstract: SA11A SA12A SA130A SA13A SA14A SA15A SA160A SA16A SA170CA
Contextual Info: SA5.0A Series 500 Watt Peak Power MiniMOSORBE Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener

f2n02

Abstract: AN569 MMDF2N02E MMDF2N02ER2
Contextual Info: MMDF2N02E Power MOSFET 2 Amps, 25 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOSt

d4207

Abstract: MMDF4207 MMDF4207R2 AN569 SMD310
Contextual Info: MMDF4207 Preferred Device TMOS Dual P-Channel Field Effect Transistors Medium Power Surface Mount Products MiniMOS devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area.

A Listing and Cross Reference of Available Technical Literature from ON Semiconductor

Abstract: MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual
Contextual Info: SG385/D Rev. 3, Jul-2000 Low Voltage Surface Mount TMOS Power MOSFET Selector Guide ON Semiconductor Featuring MiniMOS™ SO-8 , EZFET™, Micro8™, SOT-223, TSOP-6, SOT-23, SC-70/SOT-323, DPAK and D2PAK Low Voltage Surface Mount MOSFETs t TMOS Power MOSFETs

p6ke39a MS

Contextual Info: TVS — in Axial Leads Table 6. Peak Power Dissipation, 500 Watts @ 1 ms Surge Case 59-09 — MiniMOSORBt IRSM IRSM 2 2 3 4 5 6 Time ms Surge Current Characterisitcs CASE 59−09 (MiniMOSORB) PLASTIC Cathode = Polarity Band 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 35 A Pulse