S1308 Search Results

S1308M

Abstract: electronic transformer S130
Contextual Info: T1/ CEPT/ISDN-PRI TRANSFORMER P/N: S1308M DATA SHEET Page : 1/ 1 Feature l l l l l l Designed to meet UL requirements for reinforced insulation. Extended temperature range. Dual SMT package contains both transmit and receive transformers. At -40°C,OCL is 600uH minimum. All other parameters

C67078-S1308-A2

Abstract: BUZ21
Contextual Info: BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current

S1308M

Contextual Info: Bothhandusa.com S1308M T1/ CEPT/ISDN-PRI TRANSFORMER P/N: S1308M DATA SHEET Page : 1/ 1 Feature l l l l l l Designed to meet UL requirements for reinforced insulation. Extended temperature range. Dual SMT package contains both transmit and receive transformers.

BUZ21

Abstract: sis8
Contextual Info: SIEM ENS BUZ 21 SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type Vps A ^DS on) Package 1> Ordering Code BUZ 21 100 V 21 A 0.085 £2 TO -220 AB C67078-S1308-A2 M axim um Ratings Param eter Continuous drain current, Tc = 25 'C

C67078-S1308-A2

Abstract: BUZ21
Contextual Info: BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: BUZ 21 Infineon •chnologiês SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b f f DS(on Package BUZ 21 100 V 21 A 0.085 Q TO-220 AB ’ Ordering Code C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ21

Contextual Info: SIEMENS BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 21 Vbs 100 V b ^DSiort Package Ordering Code 21 A 0.085 Q TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current h Values

Contextual Info: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification

200743D

Abstract: S1308 S1307 BAW 43 S1309 MSL3 20-pin SKY73023-21
Contextual Info: PRELIMINARY DATA SHEET SKY65238: Power Amplifier Module With Integrated BAW Filter for WLAN Applications Applications Description • IEEE802.11 b/g/n WLAN − Access points and routers − Set top boxes, gaming consoles, and other home entertainment devices including video, voice, and data

Contextual Info: DG2015 Vishay Siliconix Low-Voltage, Low RON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG2015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the

DG1411E

Contextual Info: DG1411, DG1412, DG1413 www.vishay.com Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG1411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power 0.033 W

Contextual Info: DG2017 Vishay Siliconix Low-Voltage, Low RON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG2017 is a dual DPDT double-pole/double-throw , optimized for high performance analog switching, and specifically designed to benefit portable audio applications.

s1308 diode

Abstract: S1308 diode s1308 MMSF1308R2 motorola an569 thermal AN569 MMSF1308 SMD310
Contextual Info: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMSF1308 Low Power Surface Mount Products Single N-Channel MiniMOS Field Effect Transistor MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These

Contextual Info: SPICE Device Model SiR460DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model SiR416DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: DG441B, DG442B Vishay Siliconix Improved Quad SPST CMOS Analog Switches FEATURES DESCRIPTION The DG441B, DG442B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG441B, DG442B are upgrades to the original DG441, DG442.

Contextual Info: DG2015 Vishay Siliconix Low-Voltage, Low RON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG2015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the

s1308 diode

Abstract: diode s1308 S1308 AN569 MMSF1308 MMSF1308R2
Contextual Info: MMSF1308 Preferred Device Power MOSFET 7 Amps, 30 Volts N–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

Contextual Info: SQ4284EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 40 RDS(on) () at VGS = 10 V 0.0135 RDS(on) () at VGS = 4.5 V 0.0148 ID (A) 8 Configuration Dual D1 SO-8 S1 1

Contextual Info: DG2041, DG2042, DG2043 Vishay Siliconix Low-Voltage, Low RON Quad SPST Analog Switch DESCRIPTION FEATURES The DG2041/2042/2043 are quad single-pole/single-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low

Contextual Info: SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualified 100 RDS(on) () at VGS = 10 V 0.0089

Contextual Info: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd