Untitled
Abstract: No abstract text available
Text: Intelligent Power Devices IPDs MIP803, MIP804 Silicon MOS IC • Features 10 5 6 6.3±0.2 4.3±0.2 ■ Recommended Set ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Power supply voltage Input voltage (ENB) Output voltage (CIL) Output voltage (ELD)
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MIP803,
MIP804
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SSONF-10D
Abstract: MIP803 Step-up 12V to 15V "Intelligent Power Devices" MIP804
Text: Intelligent Power Devices IPDs MIP803, MIP804 Silicon MOS IC • Features 5 6 0 to 0.2 ● Watches, pagers, portable CD players, cellular phones, MD players, display panels of remote controllers, and etc. ■ Absolute Maximum Ratings (Ta = 25°C) Unit Power supply voltage
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MIP803,
MIP804
SSONF-10D
MIP803
Step-up 12V to 15V
"Intelligent Power Devices"
MIP804
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MIP16
Abstract: MIP803 MIP804 MIP9
Text: Intelligent Power Devices IPDs MIP803, MIP804 Silicon MOS IC • Features 6 6.3±0.2 4.3±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) Ratings Unit VCC − 0.5 to 4 V Input voltage (ENB) VENB − 0.5 to VCC + 0.5 V Output voltage (CIL) VCIL − 0.5 to 220
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MIP803,
MIP804
SSONF-10D
MIP13£
MIP14£
MIP15£
MIP16£
MIP17£
MIP18£
MIP01£
MIP16
MIP803
MIP804
MIP9
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MIP803
Abstract: MIP804
Text: Intelligent Power Devices IPDs MIP803, MIP804 Silicon MOS IC • Features 5 6 0 to 0.2 ● Watches, pagers, portable CD players, cellular phones, MD players, display panels of remote controllers, and etc. ■ Absolute Maximum Ratings (Ta = 25°C) Unit Power supply voltage
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MIP803,
MIP804
SSONF-10D
MIP803
MIP804
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MIP004
Abstract: No abstract text available
Text: MIP0040MS Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 8 Out Line DIP7-A1 Marking MIP004 A. ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C No. 1 Item Ratings Unit VIN –0.3 to 500
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MIP0040MS
MIP004
MIP01*
MIP02*
MIP00*
MIP55*
MIP816/826
MIP52*
MIP56*
MIP53*
MIP004
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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Untitled
Abstract: No abstract text available
Text: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 Single chip IC of protection function circuit
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MIP106
MIP13Â
MIP14Â
MIP15Â
MIP16Â
MIP17Â
MIP18Â
MIP01Â
MIP02Â
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mip2f2
Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
Text: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.
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MIP414
Abstract: MIP414MD
Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP4140MD
O-220IPD7-A2
MIP414MD
MMIP811/812
MMIP814/815/816
MIP82£
MIP55£
MIP414
MIP414MD
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MIP9E01
Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
Text: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply
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MIP704
MIP10£
MIP811/812
MIP11£
MIP814/815/816
MIP803/804/806
MIP82£
MIP805
MIP9E01
MIP9E02
MIP709
ipd mip2
ipd mip4
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MIP9E01
Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
Text: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit
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MIP108
MIP10£
MIP811/812
MIP11£
MIP814/815/816
MIP803/804/806
MIP82£
MIP805
MIP9E01
mip10
Matsua & SAW & IF
matsua saw
MIP108
4.5V TO 100V INPUT REGULATOR
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MIP417MD
Abstract: TO-220IPD7-A2 mip41 MIP16
Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP4170MD
O-220IPD7-A2
MIP417MD
MIP811/812
MIP814/815/816
MIP82£
MIP55£
MIP417MD
TO-220IPD7-A2
mip41
MIP16
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Matsua de
Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
Text: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit
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MIP106
MIP10£
MIP811/812
MIP11£
MIP814/815/816
MIP803/804/806
MIP82£
MIP805
Matsua de
MIP9E01
4.5V TO 100V INPUT REGULATOR
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MIP9E01
Abstract: MIP9E02 MIP805 MIP709
Text: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in
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MIP705
MIP10£
MIP811/812
MIP11£
MIP814/815/816
MIP803/804/806
MIP82£
MIP805
MIP9E01
MIP9E02
MIP709
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MIP9E01
Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
Text: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply
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MIP504
MIP10£
MIP811/812
MIP11£
MIP814/815/816
MIP803/804/806
MIP82£
MIP805
MIP9E01
MIP9E02
MIP9E
ipd mip2
ipd mip4
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mip160
Abstract: MIP162 mip163 MIP164 MIP166 MIP2 MIP165 mip*163 MIP9E
Text: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)
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MIP160,
MIP162,
MIP163,
MIP164,
MIP165,
MIP166
MIP13£
MIP14£
MIP15£
MIP16£
mip160
MIP162
mip163
MIP164
MIP166
MIP2
MIP165
mip*163
MIP9E
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MIP2
Abstract: MIP16 MIP805
Text: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A M Di ain sc te on na tin nc ue e/ d 12° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g
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MIP805
MIP13£
MIP14£
MIP15£
MIP16£
MIP17£
MIP18£
MIP01£
MIP02£
MIP10£
MIP2
MIP16
MIP805
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block diagram esd protection
Abstract: MIP9E MIP02 MIP2 MIP3 mip506 MIP814 MIP16 MIP2 panasonic MIP9
Text: Intelligent Power Devices IPDs MIP506 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated
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MIP506
MIP13£
MIP14£
MIP15£
MIP16£
MIP17£
MIP18£
MIP01£
MIP02£
MIP10£
block diagram esd protection
MIP9E
MIP02
MIP2
MIP3
mip506
MIP814
MIP16
MIP2 panasonic
MIP9
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mip0210
Abstract: MIP0210SP MIP16 japanese fet regulator ic st mip4
Text: Intelligent Power Devices IPDs MIP0210SP Silicon MOS IC • Features M Di ain sc te on na tin nc ue e/ d ● Switching power supply (to 7W) ● AC adaptor ● Battery charger 8 2 7 3 6 4 5 6.3±0.2 7.62±0.25 Symbol Drain voltage VD Control voltage VC Output current
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MIP0210SP
MIP13£
MIP14£
MIP15£
MIP16£
MIP17£
MIP18£
MIP01£
MIP02£
MIP10£
mip0210
MIP0210SP
MIP16
japanese fet
regulator ic st
mip4
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mip2m4
Abstract: MIP2M40 MIP2M40MS marking aef MIP2M TVS marking v6 MARKING CODE V6 V4 MARKING marking code V3 V3 marking code
Text: MIP2M40MS Silicon MOS FET type integrated circuit • Features Package AC input detecting function By connecting SO terminal, it is able to select functions as below: 1 Boot up and stop operation according to AC input or output shortcircuit SO teminal to VDD terminal)
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MIP2M40MS
MIP803/804
MIP816/826
MIP51£
MIP55£
MIP50£
mip2m4
MIP2M40
MIP2M40MS
marking aef
MIP2M
TVS marking v6
MARKING CODE V6
V4 MARKING
marking code V3
V3 marking code
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MIP16
Abstract: mip02 MIP2 MIP501 MIP502 MIP55
Text: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) Over-current-protection function built-in 4.5±0.2 0.65±0.1 0.85±0.1 Direct drive possible by the logic circuit • Applications ● 0.65±0.1
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MIP501,
MIP502
MIP501
MIP13£
MIP14£
MIP16
mip02
MIP2
MIP501
MIP502
MIP55
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Untitled
Abstract: No abstract text available
Text: Panasonic Intelligent Power D evices IPDs MIP803, MIP804 Silicon MOS 1C Unit : mm • Features • Down sizing of set (without transformer) Set size reduction by raising the coil voltage to reduce the number of external parts and employment of thin surface mounting package
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MIP803,
MIP804
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Untitled
Abstract: No abstract text available
Text: Panasonic Intelligent Power D evices IPDs MIP803, MIP804 Silicon MOS 1C U nit : rmn • Features • Down sizing of set (without transformer) Set size reduction by raising the coil voltage to reduce the number of external parts and employment of thin surface mounting package
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MIP803,
MIP804
MIP803
MLP804
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3sk287
Abstract: 3sk272 2SK690 "Intelligent Power Device"
Text: Field Effect Transistors • IPD Intelligent Power Device (continued) Application Output Breakdown Voltage Type No. EL Driver MIP803 Application Type No. Output MOS FET Vcc VDSS Id 1.5 -3 .5 V 200V 15/70mA Input Voltage VlN Output Breakdown Voltage Package
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MIP803
15/70mA
140kHz
MIP501
MIP502
AC/12V
O-92NL
3SK241
3SK272
3SK273
3sk287
2SK690
"Intelligent Power Device"
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