MISSILE GUIDANCE IC Search Results

antilog amplifier

Abstract: AD9521SE SL1521 AD9521 AD9521JH AD9521KH SL521 direct replacement
Contextual Info: ANALOG D EVIC ES 250MHz Wideband Logarithmic Amplifier AD9521 PIN DESIGNATIONS FEATURES 250MHz Bandwidth M onolithic Construction Low Noise Figure 4.7dB Excellent Detected Output Matching Direct Replacement for SL521/SL1521 O U TPU T GROUN D APPLICATIONS Missile Guidance

Honeywell m7420a1009-7

Abstract: pressure sensor array honeywell sensor 405fw504-b Leader Sensors
Contextual Info: HONEYUELL/ S S E C 3ÖE D • M5 5 1 Ô7 2 0G00b7R 5 HH0N3 Honeywell Sensor Description HIGH-PERFORMANCE PIEZORESISTIVE PRESSURE SENSORS PRODUCT PRESSURE RANGE APPLICATION • ST3000 Family .4"H20 to 6Kpsig 4 types 1"H20 to 500psi absolute (2 types) Process control

b 1009n

Abstract: ACTM-1001N ACTM
Contextual Info: Uirmel Diode Detector Modules Wide Frequency Coverage in M icrostrip or Stripline Circuits Tunnel diode detector modules from Advanced Control Components are available to meet both narrowband and broadband requirements from 0.5 to 18 GHz. All feature low video resistance

Contextual Info: CORPORATE OVERVIEW MITEQ, an acronym for M icrowave (I)nformation (T)ransmission (EQ)uipment, designs and manufactures a complete line of high-performance components and subsystems for the microwave electronics community. Located on Long Island, New York for more than thirty years, it has grown into

okuma

Contextual Info: CORPORATE OVERVIEW MITEQ, an acronym for M icrowave (I)nformation (T)ransmission (EQ)uipment, designs and manufactures a complete line of high-performance components and subsystems for the microwave electronics community. Located on Long Island, New York for more than thirty years, it has grown into

missile seeker

Abstract: seeker missile guidance ic missile guidance Digital Signal Processing Architectures military mcm missile MCP market Charter Power Systems
Contextual Info: E L E C T R O N I C S A PENNWELL PUBLICATION VIEWPOINT COTS and MCMs: an unlikely, yet powerful partnership By Bob Scannell Analog Devices Inc. Multichip Products Group F or some, commercialoff-the-shelf COTS has been a means to faster time-to-market and

okuma

Abstract: Radar Warning Receiver
Contextual Info: CORPORATE OVERVIEW MITEQ, an acronym for M icrowave (l)nformation (T ra n s ­ mission (EQ)uipment, designs and manufactures a complete line of high-performance components and subsystem s for the microwave electronics community. Located on Long Island, New York for more than thirty years, it has grown into

Contextual Info: March 2014 CCD Linear Image Sensor CCD Charge Coupled Device TCD1254GFG 2500-elements, embedded electronic shutter function, for barcode scanner. The TCD1254GFG is a high sensitive and low dark current 2500-elements linear image sensor. This device consists of sensitivity CCD chip. The TCD1254GFG has electronic shutter function (ICG).

TCD1103GFG

Contextual Info: March 2014 CCD Linear Image Sensor CCD Charge Coupled Device TCD1103GFG 1500-elements, embedded electronic shutter function, for barcode scanner. The TCD1103GFG is a high sensitive and low dark current 1500-elements linear image sensor. This device consists of sensitivity CCD chip. The TCD1103GFG has electronic shutter function (ICG).

AS8FLC2M32

Abstract: A19 SMD smd code a12 smd code a13 O20 Package
Contextual Info: AS8FLC1M32 AS8FLC2M32 DSCC Approved 32Mb & 64Mb 3.3V Boot Block Flash Array 32Mb & 64Mb Hermetic Flash Multi-Chip Module FEATURES BENEFITS • 32Mb device, total density, organized as 1M x 32 / 64Mb device, total density, organized as 2M x 32 • Bottom boot block sector architecture

InfraRed Associates

Abstract: InfraRed Associates hct-100 HgCdTe Infrared Preamplifiers metal detectors circuits HCT-100 X1010 missile HCT-40 HCT-55
Contextual Info: SPECIFICATIONS FOR STANDARD DETECT! InfraRecJ ASSOCIATES, Inc 70 > 50 1000 Route #130, Cranbury, NJ 08512 609 395-7600 Telex 642282 H H o ni MODEL SIZE (inches) Photoconductive HgCdTe detectors fabricated by Infrared Associates, Inc. and optimized for operation in the 8-13 micron

E67349

Abstract: TLP250F
Contextual Info: TLP250F TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TLP250F Transistor Inverter Inverter for Air Conditionor IGBT Gate Drive Power MOSFET Gate Drive Unit in mm The TOSHIBA TLP250F consists of a GaAℓAs light emitting diode and an integrated photodetector.

TLP751F

Abstract: ic 8870 E67349 TLP751 ic 8870 ttl
Contextual Info: TLP751F TOSHIBA Photocoupler GaAℓAs Ired + Photo IC TLP751F Digital Logic Ground Isolation Line Receivers Microprocessor System Interfaces Switching Power Supply Feedback Control Analog Signal Isolation Unit: mm The TOSHIBA TLP751F consists of a high-output GaAℓAs light emitting

2SA1954

Contextual Info: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

HN2C01FE

Contextual Info: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity

2SC4213

Contextual Info: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

2SA1587

Abstract: 2SC4117
Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) •

HN2A01FU

Contextual Info: HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FU Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) : hFE = 120~400

2SC2458

Abstract: 2sa1048
Contextual Info: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SA1297

Abstract: 2SC3267
Contextual Info: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)

2sc4116

Abstract: 2SA1586
Contextual Info: 2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

HN4A56JU

Contextual Info: HN4A56JU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A56JU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small Package (Dual Type) z High Voltage and High Current z High hFE z Excellent hFE Linearity : VCEO= −50V, IC = −150mA(MAX.)

RN1441

Abstract: RN1442 RN1443 RN1444
Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting and Switching Applications Unit in mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

HN4C51J

Contextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)