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    2SA1297 Search Results

    2SA1297 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1297 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1297 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1297 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1297 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1297 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1297 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1297 Unknown Cross Reference Datasheet Scan PDF
    2SA1297 Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Scan PDF
    2SA1297 Toshiba TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Scan PDF
    2SA1297 Toshiba PNP transistor Scan PDF
    2SA1297 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SA1297-GR Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1297GR Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1297-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1297Y Toshiba Silicon PNP Epitaxial Transistor Scan PDF

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    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1297 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267.

    Untitled

    Abstract: No abstract text available
    Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3267 2SA1297

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1297 低周波電力増幅用 電力スイッチング用 単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267 2SA1297 2SC3267

    2SC3267

    Abstract: 2SA1297
    Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3267 2SA1297 2SC3267 2SA1297

    2SA1297

    Abstract: 2SC3267
    Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3267 2SA1297 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3267 2SA1297

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1297Y Freq120M

    2SA1297

    Abstract: 2SC3267
    Text: 2SC3267 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3267 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1297 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)


    Original     		PDF 2SC3267 2SA1297 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A · Complementary to 2SC3267. Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1297 Freq120M

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.


    OCR Scan     		PDF 2SA1297 2SC3267. 961001EAA2'

    A1297

    Abstract: 2SA1297 2SC3267
    Text: 2SA1297 TO SH IBA 2 S A 1 297 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V q E (sat)“ —0.5V (Max.) @Iq = —2A Complementary to 2SC3267.


    OCR Scan     		PDF 2SA1297 2SC3267. A1297 2SA1297 2SC3267

    2SA1309

    Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280
    Text: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303


    OCR Scan     		PDF Ta-25cC, 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 O-92JFÃ 2SA1300 2SA1309 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N sa1312 2SC3280

    2SA1297

    Abstract: 2SC3267
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297


    OCR Scan     		PDF 2SC3267 2SA1297 961001EAA2' 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: TO SH IBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat)“ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.4


    OCR Scan     		PDF 2SC3267 2SA1297 55MAX. 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA 1297 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1297) POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V q e (sat)= —0.5V (Max.) @Iq = —2A • Complementary to 2SC3267.


    OCR Scan     		PDF 2SA1297) 2SC3267. 2SA1297

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4 .2 M A X. • • Low Saturation Voltage : V q e (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297


    OCR Scan     		PDF 2SC3267 2SA1297 961001EAA2'

    A1297

    Abstract: 2SA1297 2SC3267 A-1297
    Text: TOSHIBA 2SA1297 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V qE (sat)= —0-5V (Max.) @Iq = —2A Complementary to 2SC3267.


    OCR Scan     		PDF 2SA1297 A1297 2SC3267. 55MAX. 961001EAA2' A1297 2SA1297 2SC3267 A-1297

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS Û.2MAX. • • Low Saturation Voltage : V q E (sat)~ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.55MAX.


    OCR Scan     		PDF 2SC3267 2SA1297 55MAX. 961001EAA2'

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737