MJ 3055 Search Results

transistor mj 3055

Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
Contextual Info: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •

2N5000

Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148
Contextual Info: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

Tip 26C transistor

Abstract: tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055
Contextual Info: TYPES TIP140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COM PLEM ENTARY USE WITH TIP145, TIP146, TIP147 125 W at 25°C Case Temperature • Min hpE of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating

tip 222 TRANSISTOR

Abstract: TIP127 Application Note transistor tip 107 dioda switching TIP 122 transistor darlington circuit tip 42 Tl 5153 TIP121 TEXAS TIP122 texas instrument TIP120
Contextual Info: TYPES TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR CO M PLEM EN TARY USE WITH TIP120, TIP121, TIP122 • 65 W at 25° C Case T emperature M in h F E o f 1000 at 3 V , 3 A • 5 A Rated Collector Current 50 mJ Reverse Energy Rating

TIP 22 transistor

Abstract: 2N5004 2N5002 2N5154 circuit 2N 3055 TRANSISTOR bd 147 Transistor Bd 140 tip 147 cw 2N5005 2N5152
Contextual Info: TYPES 2N5002, 2N5004, 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W IT H COM PU TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y For Complementary Use with 2N 50 03, 2N 50 05, 2N 51 51, and 2N 51 53 15 mJ Reverse Energy Rating w ith lc = 10 A and 4 V Reverse Bias

3055e mos

Abstract: TK3055E STK3055E 3055E stk3055 3055EN TK3055
Contextual Info: SGS-THOMSON ir a u » K S S TK 3055E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss R D S o n Id S TK3055E 60 V 0 .1 5 £1 13 A , „ „ , , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

Contextual Info: EDD NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± DRAWING NO.: A 82-3055TC .0 1 0 ” [,2 5 4 m m ]. .070 MAX [1 .7 8 m m ] REV. .060 [ 1 .52m m ] .120 [3 .0 5 m m ] MATERIALS: SUBSTRATE: BERYLLIUM OXIDE COVER: ALUMINA TAB: BERYLLIUM COPPER PER ASTM B 1 9 4

TP3055E

Abstract: 40AMJ tp3055 MTP3055E MTP3055EFI TP3055EFI GC2809D
Contextual Info: SGS-THOMSON * 5 3055E M TP3055EFI mtp iLiO M iQ £I 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI • . ■ . ■ ■ . V dss RDS(on) Id 60 V 60 V < 0.15 £2 < 0.15 a 14 A 10 A TYPICAL RDS(on) = 0.1 AVALANCHE RUGGED TECHNOLOGY

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

BTS142-D

Abstract: BSP77 3055 sot-223 BUK139-50DL
Contextual Info: SGD518/D Rev. 0, Oct-2003 ON Semiconductor SmartDiscrete Portfolio To view a device data sheet, please click on the device number. VGS=10,25°C Temp Sense Temp Limit1 Circuitry ID Limit2 Circuitry ESD (HBM) Package Energy Nearest Cross Reference 55/59

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

3055t

Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
Contextual Info: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115

Contextual Info: SSD3055 18A , 30V , RDS ON 22Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

MJ15015

Abstract: MJ15016 2N3055A 2N30 MJ 2n3055 2N3055 J15016 MJ2955 MJ2955A
Contextual Info: ÆàMOSPEC COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS . Power Base complementary transistors designed for high power audio, stepping motor and other linear application. These devices can also be used in power switching circuits such as relay or solenoid drivers,inverter

91G5

Abstract: A2755
Contextual Info: A - r f- ô S Little Rebels are one of Ohmite's more economical lines of low wattage resistors. Constructed of a pure carbon film deposited on a high-grade ceramic body, these units offer better stability perfor­ mance than comparable carbon composition resistors.

3055l

Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 120 mW

mosfet L 3055

Abstract: mj 3055 3055 l pd3055 3055 sot-223
Contextual Info: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW

3055 sot-223

Abstract: 3055 l NTF3055-100
Contextual Info: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES 60 VOLTS

3055l

Abstract: f 3055l NTF3055L108 NTF3055L108T1 NTF3055L108T3 NTF3055L108T3LF
Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES

3055 l

Abstract: 3055 sot-223 3055L
Contextual Info: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES 60 VOLTS

3055L

Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES

3055 sot-223

Abstract: mosfet p 3055 MJ 3055 mosfet L 3055 3055 l
Contextual Info: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW

3055LG

Contextual Info: NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 120 mW