MJ 4310 Search Results

Contextual Info: 高速マルチチャンネル 分光器 PMA100 sの時間分解能で連続スペクトル計測 概 要 高速マルチチャンネル分光器 PMA-20は発光、 蛍光、吸収等の反応におけるスペクトル変化を100 μsの時間分解能で高感度に計測します。

Contextual Info: フラッシュフォトリシスシステム ナノ秒~ミリ秒領域における過渡吸収スペクトルや時間分解蛍光スペクトルを容易に測定！ 光化学反応における反応中間体の生成消滅過程を追跡することが可能です。

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

ESM 713

Abstract: esm 231 transistor mj 4032 8051 midi 16X4 keypad matrix esm 107 RM EMK TR10 transistor ESM 30 eSM010
Contextual Info: eSM Series INTEGRATED DEVELOPMENT ENVIRONMENT V1.0 USER’S GUIDE ELAN MICROELECTRONICS CORP. Second Edition September 2004 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM. Microsoft, MS, MS-DOS, and Windows are registered trademarks of Microsoft Corporation.

Contextual Info: Time-Resolved Absorption Spectrum Analyzing System 時間分解吸収分光解析システム 極 短 時 間領域における過渡吸 収 ス ペクト ルを測 定 ! 溶液固体、薄膜などの光化学反応における反応中間体の生成消滅過程を追跡することが可能です。

esh060

Abstract: IRF 3205 7A irf 3205 a irf 3713 irf 6818 IRF 4310 irf 6250 eSH340 eSH010 8772 P
Contextual Info: eSH/eSHS Series INTEGRATED DEVELOPMENT ENVIRONMENT USER’S GUIDE Doc. Version 1.6 Applicable to eSH/eSHS IDE Version 1.4 and later ELAN MICROELECTRONICS CORP. August 2009 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM

Contextual Info: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G S

irf3805s

Abstract: AN-994 mj 4310 L0043 irf3805l-7p IRF3805L IRF3805L-7PPBF IRF3805S-7P
Contextual Info: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

Contextual Info: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

mj 4310

Abstract: Irf 1540 N MOSFET IRF 1540 Irf 1540 G IRF 4310 IRF3805S-7P L0043 DM 7820 AN-994 IRF3805S
Contextual Info: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A

Irf 1540 N

Abstract: Irf 1540 G MOSFET IRF 1540 IRF3805S-7P IRF 4310 AN-994 L0043 IRF3805S mj 4310
Contextual Info: PD - 96904 AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A

IRF 4310

Abstract: IRF3805S-7P mj 4310 AN-994 IRF3805S L0043
Contextual Info: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A

IRF3805L

Abstract: IRF3805L-7PPBF IRF3805S IRF3805S-7P
Contextual Info: IRF3805S-7PPbF IRF3805L-7PPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 2.6m‰

Contextual Info: PD - 97205B IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 2.6mΩ‰

IRFB3407Z

Contextual Info: IRFB3407ZPbF HEXFET Power MOSFET Applications l l l Battery Management High Speed Power Switching Hard Switched and High Frequency Circuits G Benefits l l l l VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D S Improved Gate, Avalanche and Dynamic

Contextual Info: IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free l l l l l l D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A

DIODE T25 4 EO

Abstract: DIN-7985 DIN7985 M6x12 semibox
Contextual Info: se MIKR d n V r sm If r m s V rrm sin 180', Tease —103 °C‘, 50 Hz 290 A If a v V 1000 SKKE 600 F 10 1200 SKKE 600 F 12 SKKE 600 F I fd c I fd c Tease Tam b = 92 °C = 45 °C; I fd c Tam b = 45 °C; Tvj Tvj i2t Qrr R thha = 0,15 K/W (1/6 P16/300F) 7 000 A

L0043

Abstract: TO-263CA AUIRF3805S-7PTRL mj 4310 Irf 1540 G Irf 1540 N auirf3805l-7p IRF 4310 MOSFET IRF 1540 AN-994
Contextual Info: AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P AUIRF3805L-7P HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P AUIRF3805L-7P HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

FDA24N50F

Contextual Info: UniFETTM FDA24N50F N-Channel MOSFET 500V, 24A, 0.2 Features Description • RDS on = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

fda24n50f

Abstract: A1872 ir 4310
Contextual Info: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

DIN7985

Abstract: semibox DIN-7985 31949100 DIN7985-4 300f diodes C664
Contextual Info: IFRMS maximum value for continuous operation, Tcase = 25 °C 664 A V IFAV (sin 180; Tcase = 85 °C; 50 Hz) 423 A SKKE 600 F 1000 SKKE 600 F 10 Preliminary Data 1200 SKKE 600 F 12 Symbol Conditions SKKE 600 F IFDC IFDC IFDC Tcase = 62 °C Tcase = 80 °C Tamb = 45 °C; Rthha = 0,05 °C/W

FDMS3604S

Abstract: 501B 8 P 231B DIODE
Contextual Info: Preliminary Datasheet FDMS3604S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 6.8 mΩ N-Channel: 30 V, 40 A, 2.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 6.8 mΩ at VGS = 10 V, ID = 13 A

FDA24N50F

Abstract: mj 4310
Contextual Info: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.