MJ1002 Search Results

MJ10020

Abstract: MJ10021 mj1002
Contextual Info: Æ&m o s p e c SWITCH MODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10020 The MJ10020 and MJ10021 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10023

Abstract: application MJ10023 npn 20A power Diode 20A DARLINGTON 20A transistor IC 12A
Contextual Info: MJ10023 Silicon NPN Power Darlington Transistor GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. TO-3 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf

Contextual Info: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J10023 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS

application MJ10023

Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,

222A

Abstract: 1N4937 MJ10023 mj1002
Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10023 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode

60 amp npn darlington power transistors

Abstract: RB650
Contextual Info: SOLID STATE INC. 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10022 The MJ10022 and MJ10023 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits

MJ10025

Abstract: MJ10024 CM2040
Contextual Info: ÆàMOS PEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10024 The MJ10024 and MJ10025 dariington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

darlington NPN 600V 12a transistor

Abstract: darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V MJ10023 NPN POWER DARLINGTON darlington NPN 600V
Contextual Info: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.

MJ10021 equivalent

Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475
Contextual Info: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for

Darlington NPN 250W

Abstract: MJ10021
Contextual Info: MJ10021 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode Description: The MJ10021 is a Darlington transistor in a TO3 type package designed for high−voltage, high− speed, power switching in inductive circuits where fall time is critical. This device is particularly

3020 transistor

Abstract: b1 100c UD
Contextual Info: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS

Motorola AN222A

Abstract: MJ10023 1N4937 sps transistor
Contextual Info: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS

tnpn

Abstract: Darlington 30A reliance dc motor MJ10021
Contextual Info: 1165905 T-NPN, Si, darlington with base-emitter speedup diode. Features: • Continuous collector current-IC = 60A. Applications: Switching regulators. Inverters. Solenoid and relay drivers. AC and DC motor controls. Description: TO-3 The MJ10021 is a darlington transistor in a TO-3 type package designed for high-voltage,

Motorola AN222A

Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Contextual Info: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR

Contextual Info: ÆàMOSPEC SW ITCH M O DE S E R IE S NPN SILICON PO W ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SP EED U P DIODE NPN MJ10022 The M J 10022 and M J 10023 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits

Contextual Info: M O TOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 40 AMPERE NPN SILICON POW ER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS Th e M J10022 and M J10023 Darlington translators are designed for high-voltage,

CASE 221A Style 1

Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,

1N4937

Abstract: MJ10020 MJ10021 AN222A
Contextual Info: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS

1N4937

Abstract: MJ10020 MJ10021
Contextual Info: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS

application MJ10023

Abstract: MJ10022 MJ10023 NPN 300 VOLTS vce POWER TRANSISTOR npn darlington transistor 150 watts 1N4937 AN222A
Contextual Info: MOTOROLA Order this document by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS

mj10025

Contextual Info: MOTOROLA SC XSTR S/R F 12E D | b 3 b 7 2 S ‘4 OGflSObfl MOTOROLA M | 9 MJ10024 MJ10025 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 2 0 AMPERE N PN S ILIC O N POWER D A R LIN G TO N TR A N S IS T O R S SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS

60 amp npn darlington power transistors

Abstract: MJ10023 5 amp npn darlington power transistors MJ10022 application MJ10023
Contextual Info: ÆàMOSPEC SW ITCHMODE SERIES NPN SILICON PO W ER DARLINGTON TRANSISTORS WITH BASE-EM ITTER S PEED U P DIODE NPN MJ10022 The MJ10022 and MJ10023 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10023

Abstract: "Tektronix 475" tektronix 475 MJ10022 an222a
Contextual Info: MOTOROLA Order this document by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS

mj power transistor speedup diode

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage,