MJ300 Search Results

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

MJ3000

Contextual Info: MJ3000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

MJ3001

Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001
Contextual Info: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.

Contextual Info: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL

motorola MJ3000

Abstract: transistor MJ2501 MJ3000 circuit mj2501 mj3000 MJ3001 transistor mj3001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ‘"W M f a y f lf t w a n g o g s M aKM SA •M -H H ttM A ) Medium-Power Complementary Silicon Transistors PNP MJ2500 MJ2501* NPN MJ3000 MJ3001* . . . for use as output devices in complementary general purpose amplifier applica­

mj3001

Abstract: mj2501 MJ3000 AIN60
Contextual Info: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are

Contextual Info: rz 7 SCS-THOM SON MJ2501 i*! i[LI ¥[M0 gS MJ3001 COMPLEMENTARY SIUCOnTto W ^ TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3

h 033

Abstract: MJ300-02A LB-030
Contextual Info: Mounting Pad Packing Magazine Name MJ300-02A LB-030 26 pin SOJ 300 mil 14 1 13 F E G U J C 26 D B I H P T Q K M N M NOTE ITEM Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. B MILLIMETERS

h 033

Abstract: 0-12 MJ300-02A D14C
Contextual Info: Mounting Pad Packing Magazine Name MJ300-02A LB-030 26 pin SOJ 300 mil 14 1 13 C 26 F D B I H G U J E M N T P Q K M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS

Contextual Info: MJ3001 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

Contextual Info: MJ300A2F55 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)550ö V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1400 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.80 @I(C) (A) (Test Condition)300

mj3001

Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u

MJ3001

Abstract: transistor mj3001 mj2501 MJ3001 equivalent SGS-Thomson
Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power

transistor mj3001

Abstract: j3000 MJ3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501 MJ3000
Contextual Info: MJ2500, MJ2501, MJ3000, MJ3001 continued E L E C T R IC A L C H A R A C T E R IS T IC S (Tc = 2S°C unless otherwise noted)_ _ _ | Characteristic | Symbol | M in | M ix I O F F C H A R A C T E R IS T IC S

MJ300-02A

Contextual Info: 5.7 UNIT : mm 10.4 MJ300-02A, LB-030 length : 461±2.0 thickness : 0.6 +0.3 −0.2 tolerance : ±0.4 material : plastic with antistatic finish Applied Package 26-pin Plastic SOJ (300 mil) Quantity (pcs) MAX. 25

transistor mj3001

Abstract: MJ2501 MJ3001
Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES • ■ APPLICATION AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL POWER SWITCHING

MJ300

Abstract: mj300av100 equivalent of transistor D 2331 diode l 0607 ip rating 4221 motorola transistor diode l 0607 max4283 SC3662 MJ300A
Contextual Info: 6367254 MOTOROLA SC MOTOROLA Tb XSTRS/R F 9 6D 8 1 5 1 5 D 7 '3 3 ~ 3 £ Order this data sheet by MJ300AV100/D DE | ti317ES4 ODfllSlS 5 SEMICONDUCTOR TECHNICAL DATA MJ300 AV 100 NPN S ilic o n P o w e r T ra n s is to r M odule Energy M anagem ent Series

transistor mj3001

Abstract: TRANSISTOR 2SC 635 MJ3000 MJ3000 circuit MJ2501 MJ3001 J3000 j-2500 MJ2500 AN-415
Contextual Info: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose

transistor MJ2501

Abstract: transistor mj3001 MJ2501 MJ3001
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 Min @ IC = -5A ·Collector-Emitter Breakdown VoltageV(BR)CEO= -80V(Min) ·Complement to type MJ3001

MOTOROLA mj300av120

Abstract: MJ300AV120 FLU1-60 max4283 equivalent of transistor D 2331 4221 motorola transistor
Contextual Info: 63.67254 M O T O R O L A SC XSTRS/R F lyiQYOROLA ST 89D 80000 D E | b3ki7254 DDflDODO Order this data sheet by MJ300AV120/D D | • SEMICONDUCTOR TECHNICAL DATA MJ300AV120 NPN Silico n Pow er Transistor Module Energy Management Series DU AL TR I-STA G E

MJ3001

Abstract: MJ2501
Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power

MJ3001

Abstract: mj3000
Contextual Info: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÜLieTOOffäDOl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are

MJ3001

Abstract: MJ2501 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w
Contextual Info: MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 Typical at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.

ic 2501

Abstract: MJ2500 MJ2501 MJ3000 equivalent 3001 pnp
Contextual Info: SavantIC Semiconductor Product Specification MJ2500/2501 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications