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    MJD2 Price and Stock

    onsemi NJVMJD2955T4G

    TRANS PNP 60V 10A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NJVMJD2955T4G Digi-Reel 3,278 1
    • 1 $0.84
    • 10 $0.565
    • 100 $0.84
    • 1000 $0.28237
    • 10000 $0.28237
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    NJVMJD2955T4G Cut Tape 3,278 1
    • 1 $0.84
    • 10 $0.565
    • 100 $0.84
    • 1000 $0.28237
    • 10000 $0.28237
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    NJVMJD2955T4G Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.25351
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    Avnet Americas NJVMJD2955T4G Reel 10 Weeks 5,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.23967
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    Newark NJVMJD2955T4G Reel 2,500
    • 1 $0.31
    • 10 $0.31
    • 100 $0.31
    • 1000 $0.31
    • 10000 $0.28
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    Rochester Electronics NJVMJD2955T4G 1,450 1
    • 1 $0.2503
    • 10 $0.2503
    • 100 $0.2353
    • 1000 $0.2128
    • 10000 $0.2128
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    Avnet Silica NJVMJD2955T4G 11 Weeks 2,500
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    EBV Elektronik NJVMJD2955T4G 12 Weeks 2,500
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    onsemi NVMJD2D7N04CLTWG

    MOSFET N-CH 40V LFPAK56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NVMJD2D7N04CLTWG Digi-Reel 3,000 1
    • 1 $3.73
    • 10 $2.392
    • 100 $1.6475
    • 1000 $1.23402
    • 10000 $1.23402
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    NVMJD2D7N04CLTWG Cut Tape 3,000 1
    • 1 $3.73
    • 10 $2.392
    • 100 $1.6475
    • 1000 $1.23402
    • 10000 $1.23402
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    NVMJD2D7N04CLTWG Reel 3,000 3,000
    • 1 -
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    • 10000 $1.18263
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    Newark NVMJD2D7N04CLTWG Reel 3,000
    • 1 -
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    • 10000 $1.42
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    Central Semiconductor Corp CMJD2000-TR

    100V,2MA SURFACE MOUNT DIODE-CUR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMJD2000-TR Digi-Reel 2,993 1
    • 1 $5.26
    • 10 $3.685
    • 100 $5.26
    • 1000 $2.4375
    • 10000 $2.4375
    		Buy Now
    CMJD2000-TR Cut Tape 2,993 1
    • 1 $5.26
    • 10 $3.685
    • 100 $5.26
    • 1000 $2.4375
    • 10000 $2.4375
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    onsemi NJVMJD243T4G

    TRANS NPN 100V 4A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NJVMJD243T4G Cut Tape 2,250 1
    • 1 $0.94
    • 10 $0.634
    • 100 $0.94
    • 1000 $0.31959
    • 10000 $0.31959
    		Buy Now
    NJVMJD243T4G Digi-Reel 2,250 1
    • 1 $0.94
    • 10 $0.634
    • 100 $0.94
    • 1000 $0.31959
    • 10000 $0.31959
    		Buy Now
    Newark NJVMJD243T4G Reel 2,500
    • 1 $0.36
    • 10 $0.36
    • 100 $0.36
    • 1000 $0.36
    • 10000 $0.324
    		Buy Now
    Avnet Silica NJVMJD243T4G 11 Weeks 2,500
    • 1 -
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    EBV Elektronik NJVMJD243T4G 12 Weeks 2,500
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    Flip Electronics NJVMJD243T4G 17,500
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    Wuhan P&S NJVMJD243T4G 95,000 1
    • 1 $0.47
    • 10 $0.47
    • 100 $0.33
    • 1000 $0.25
    • 10000 $0.25
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    onsemi NJVMJD210T4G

    TRANS PNP 25V 5A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NJVMJD210T4G Cut Tape 2,065 1
    • 1 $1.03
    • 10 $0.694
    • 100 $1.03
    • 1000 $0.35286
    • 10000 $0.35286
    		Buy Now
    NJVMJD210T4G Digi-Reel 2,065 1
    • 1 $1.03
    • 10 $0.694
    • 100 $1.03
    • 1000 $0.35286
    • 10000 $0.35286
    		Buy Now
    Bristol Electronics NJVMJD210T4G 23,273
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    Avnet Asia NJVMJD210T4G 8 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.30154
    		Buy Now
    EBV Elektronik NJVMJD210T4G 10 Weeks 2,500
    • 1 -
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    Find more MJD2 price and stock on Findchips.com

    MJD2 Datasheets (136)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJD200 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    MJD200 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    MJD200 Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original PDF
    MJD200 On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original PDF
    MJD200 On Semiconductor Complementary Plastic Power Transistors Original PDF
    MJD200 On Semiconductor Complementary Plastic Power Transistors Original PDF
    MJD200 On Semiconductor Complementary Plastic Power Transistor Original PDF
    MJD200 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
    MJD200 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    MJD200 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJD200 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MJD200 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJD200-1 Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original PDF
    MJD200-1 On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369-07, 3 PIN, BIP General Purpose Power Original PDF
    MJD200-1 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJD200-1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MJD200-1 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJD200-D On Semiconductor Complementary Plastic Power Transistors NPN-PNP Si Original PDF
    MJD200G On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original PDF
    MJD200G On Semiconductor Bipolar Power DPAK NPN 5A 25V Original PDF
    ...

    MJD2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    PART NUMBER OF PNP 2A DPAK

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 MJD210 500mA QW-R209-019 PART NUMBER OF PNP 2A DPAK

    MJD253

    Abstract: 1N5825 MJD243 MJD243T4 MJD253T4 MSD6100 SMD310 marking MJD
    Text: MJD243 NPN , MJD253 (PNP) MJD243 is a Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage –


    Original     		PDF MJD243 MJD253 MJD243 r14525 MJD243/D MJD253 1N5825 MJD243T4 MJD253T4 MSD6100 SMD310 marking MJD

    marking MJD

    Abstract: 1N5825 MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310 mjd2
    Text: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage –


    Original     		PDF MJD243 MJD253 r14525 MJD243/D marking MJD 1N5825 MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310 mjd2

    Untitled

    Abstract: No abstract text available
    Text: MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter


    Original     		PDF MJD200 O-252

    Untitled

    Abstract: No abstract text available
    Text: MJD210 MJD210 D-PACK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector


    Original     		PDF MJD210

    Untitled

    Abstract: No abstract text available
    Text: MJD243-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.4 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MJD243-1 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors MJD2955 TRANSISTOR PNP TO-252 FEATURES y Designed for General Purpose Amplifier and Low Speed Switching Applications y Electrically Simiar to MJD3055 1.BASE y DC Current Gain Specified to10 Amperes


    Original     		PDF O-252 MJD2955 O-252 MJD3055 500KHZ

    MJD253

    Abstract: MJD243G NPN Silicon Power Transistor DPAK 369D MJD243 MJD243T4 MJD243T4G MJD253T4 MJD253T4G
    Text: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features 4.0 A, 100 V, 12.5 W


    Original     		PDF MJD243 MJD253 MJD243/D MJD253 MJD243G NPN Silicon Power Transistor DPAK 369D MJD243 MJD243T4 MJD243T4G MJD253T4 MJD253T4G

    Untitled

    Abstract: No abstract text available
    Text: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS


    Original     		PDF MJD200 MJD210 AEC-Q101 MJD200/D

    MJD200

    Abstract: No abstract text available
    Text: MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter


    Original     		PDF MJD200 MJD200

    J253G

    Abstract: MJD243G 369D MJD243 MJD243T4 MJD243T4G MJD253 MJD253T4 MJD253T4G dpak-3
    Text: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		PDF MJD243 MJD253 J253G MJD243G 369D MJD243 MJD243T4 MJD243T4G MJD253 MJD253T4 MJD253T4G dpak-3

    MJD2955

    Abstract: MJD3055 MJE2955T MJE3055T
    Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


    Original     		PDF MJD2955 MJD3055 O-252 MJE2955T MJE3055T MJD2955 MJD3055 MJE2955T MJE3055T

    MJD2955

    Abstract: MJE2955T
    Text: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PACK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T


    Original     		PDF MJD2955 MJE2955T -500mA MJD2955 MJE2955T

    Untitled

    Abstract: No abstract text available
    Text: MJD2955 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)2.0m¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MJD2955

    mje3055

    Abstract: MJE305 mje3055 127 case data
    Text: MJD2955, MJD2955T4G PNP MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS


    Original     		PDF MJD2955, NJVMJD2955T4G MJD3055, NJVMJD3055T4G MJE2955 MJE3055 MJD2955/D MJE305 mje3055 127 case data

    Untitled

    Abstract: No abstract text available
    Text: MJD243 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MJD243 Freq40M

    0035B2

    Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
    Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


    Original     		PDF MJD2955 MJD3055 O-252 MJE2955T MJE3055T 0035B2 MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T

    MJD2955

    Abstract: No abstract text available
    Text: MJD2955 NPN MJD3055 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS Features • Pb−Free Packages are Available


    Original     		PDF MJD2955 MJD3055 MJE2955 MJE3055 MJD2955

    MJD200

    Abstract: No abstract text available
    Text: MJD200 NPN EPITAXIAL SILICON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) 1 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF MJD200 MJD200

    Untitled

    Abstract: No abstract text available
    Text: MJD2955 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free Features: 1.BASE 2.COLLECTOR 3.EMITTER * Designed for General Purpose Amplifier and Low Speed Switching Applications * DC Current Gain Specified to 10 Amperes 1 3 2 D-PAK(TO-252) MAXIMUM RATINGS (TA=25ºC unless otherwise noted)


    Original     		PDF MJD2955 O-252) 10-May-2012 O-252 O-252

    Untitled

    Abstract: No abstract text available
    Text: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PACK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T


    Original     		PDF MJD2955 MJE2955T -500mA

    MJDI22

    Abstract: No abstract text available
    Text: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25


    OCR Scan     		PDF MJD340 MJD47 MJD50 MJD13003 MJD350 MJD5731 1k/12k MJD31 MJD31C MJDI22

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MJD29/29C 42E D B 7=^4142 000=100=1 fi EBSMGK NPN EPiTAXSAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER, LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan     		PDF MJD29/29C TIP29 TIP29C 200mA