MJD210L Search Results

PART NUMBER OF PNP 2A DPAK

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MJD210 PNP SILICON TRANSISTOR PN P SI LI CON DPAK FOR SU RFACE M OU N T APPLI CAT I ON S 1 ̈ DESCRI PT I ON TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ̈ FEAT U RE 1 *Collector-Emitter Sustaining Voltage

MJD210

Abstract: MJD210L-TN3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS „ 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. „ FEATURE 1 *Collector-Emitter Sustaining Voltage

MJD210L-TN3-R

Abstract: 1N5825 MJD210 MJD210L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS „ 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. „ FEATURE 1 *Collector-Emitter Sustaining Voltage