MJE13003 ON Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

mje13003 equivalent

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

2N2222 transistor output curve

Abstract: UTCMJE13003 MJE13003 transistor
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

MJE13002

Abstract: mje13003 MJE-13002 MJE13002 transistor MJE13002MJE13003
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

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Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

mje13002

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .

MJE13003

Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .

MJE13003

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

transistor mje13003

Abstract: MJE13003 TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

pin diagram mje13003

Abstract: mje13003 equivalent equivalent mje13003 transistor 2N222 2n222 TRANSISTOR 1N4933 1N5820 2N222 2N2905 MJE13003
Contextual Info: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

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Abstract: MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905
Contextual Info: MOTOROLA Order this document by MJE13002/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE13002 * MJE13003 *  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS

MJE13002

Abstract: mje13003 MJE-13002 MJE-13003 Power Transistors TO-126 Case MJE13003-TO-126 13003r
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and

pswt

Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

MJE13003 TO-92

Abstract: MJE13003 transistor tr/MJE13006/MJE13003 TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

transistor mje13003

Abstract: mje13003 to-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

mje13003x

Abstract: MJE13003 transistor MJE13003 pswt MJE13003 TO-92 MJE13003l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

MJE13003 TO-92

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .