MJE34 Search Results

mje340

Contextual Info: MJE340 MJE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350 TO-126 1 1 . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

mje350

Contextual Info: MJE350 MJE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE340 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJE340 datasheet

Abstract: MJE340 mje340 equivalent transformerless Power Transistors TO-126 Case
Contextual Info: SavantIC Semiconductor Product Specification MJE340 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment

JE341

Abstract: MJE31 MJE341 MJE341K MJE344 MJE344K
Contextual Info: MJE341 MJE341K SILICON MJE344 MJE344K PLASTIC NPN SILICON MEDIUM-POWER TRANSISTORS . . . designed fo r power ou tp u t stages in television, radio, phonograph and other consumer product applications. • Recommended for 1.5 W Class A O u tp u t in Transform er Coupled,

Contextual Info: MJE344G Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

Contextual Info: MJE3439G NPN Silicon High-Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • • • • http://onsemi.com High DC Current Gain High Current−Gain − Bandwidth Product Low Output Capacitance

je340

Abstract: MJE340 je340 transistor MJE34 power transistor mje340 transistor MJE34 MJE340 b c e MJE340K je-340 AN-415
Contextual Info: MJE340 SILICO N MJE340K 0.5 A M PER E POWER T R A N SIST O R PLASTIC M E D IU M POWER NPN S ILIC O N T R A N SIST O R NPN SILIC O N 300 VOLTS 20.8 and 30 WATTS . designed for power output stages for television, radio, phonograph and other consumer product applications.

MJE370

Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
Contextual Info: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers

JE3439

Abstract: SGS3439
Contextual Info: ‘ •_ Tggq1 5 3 7 QQa g i o 1 M Ml ^ SGS-THOMSON t^DO^ ILi©1T[H] â [MD(gl 3 3 -o 7 _ MJE3439-SGS3439 MJE3440-SGS3440 S G S-THOMSON 3QE » HIGH VOLTAGE TRANSISTOR DESC RIPTIO N The MJE3439, MJE3440, SQS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­

350T

Abstract: SGS340
Contextual Info: 7 ^ 2 3 7 005=1003 SCS-THOMSON ^ HILiCT@[fflD@§ S G S-TH0M S0N b • ^ T '3 3 ' 0 °\ MJ E340/T/SGS340 MJE350/T/SGS350 30E D HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The MJE340, MJE340T, SGS340 are silicon epi­ taxial planar NPN transistors intended for use in

MJE3440

Contextual Info: MJE3440 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon Epitaxial Planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.

MJE340

Abstract: MJE350
Contextual Info: MJE350 PNP EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT TO-126 • Complement to MJE340 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage

MJE340

Abstract: MJE350
Contextual Info: MJE340 NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT TO-126 • Complement to MJE350 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage

MJE3439

Contextual Info: ON Semiconductor MJE3439 NPN Silicon High−Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line−operated equipment requiring high fT. • High DC Current Gain • • hFE = 40 −160 @ IC

MJE340

Abstract: transformerless mje340 transistor MJE340 b c e MJE350 MJE-350
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJE340 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE350 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage

JE340

Abstract: JE340G MJE340G je340 transistor MJE340 to225 MJE340 datasheet je-340g transistor mje340g
Contextual Info: MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating

MJE340 datasheet

Abstract: MJE340 MJE350 mje340 transistor mje350 transistor MJE340-MJE350 mje340 equivalent MJE350 b c e MJE340 b c e
Contextual Info: MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN transistor intended for use in medium power

Contextual Info: Power Transistors Part No. Polarity Bipolar Transistors VCEO IC PC V (A) (W) hFE @ VCE & IC Min. Max. VCE IC (V) VCE(sat) @ IC (A) Max. (V) IC fT @ IC IC (A) Min. (MHz) (A) MJE340 NPN 300 0.5 20.0 30 240 10 0.05 - - - - MJE350 PNP 300 0.5 20.0 30 240 10

66382

Abstract: MJE340 b c e MJE340 transistormje340
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package EC B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

MJE340G

Contextual Info: MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating

Contextual Info: MJE3439 NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features http://onsemi.com • High DC Current Gain − hFE = 40−160 @ IC • • • 0.3 AMPERE POWER TRANSISTOR NPN SILICON

Contextual Info: MJE341 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)175 I(C) Max. (A)500m Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)300u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

mje34C

Contextual Info: MJE34C Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)700u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MJE34A Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)700u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)