MMBD352W Search Results

Contextual Info: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ual Sch o ttk y Barrier Diode MMBD352W T1 These devices are designed primarily for U H F mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — L ess Than 1.0 pF @ Zero Volts

Contextual Info: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Schottky Barrier Diode MMBD352WT1 3 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

MMBD352WT1

Abstract: SMD310
Contextual Info: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

MMBD352WT1

Contextual Info: ON Semiconductort Dual SCHOTTKY Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

MMBD352WT1G

Contextual Info: MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. Features http://onsemi.com • Very Low Capacitance - Less Than 1.0 pF @ 0 V

Contextual Info: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

Contextual Info: MMBD352WT1G, MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. http://onsemi.com Features •     Very Low Capacitance − Less Than 1.0 pF @ 0 V

Contextual Info: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed

Contextual Info: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

MARKING M5

Contextual Info: MMBD352W Schottky Barrier Diodes SOT-323 Features — Very low capacitance-less than 1.0Pf @zero volts. — Low forward voltage-0.5 Voltage Typ. @IF=10mA. Applications — Dimensions in inches and (millimeters) For UHF mixer applications. Ordering Information

PBD 3511

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-323 Package Weight mg 6 Product Group Type No. MMBD352W RB706F-40, RB715F, RB717F BAS70W / AW / CW / SW 1SS372 MMBD717W / AW / CW / SW BAT54W / AW / CW / SW MMBD330 BAS40W / AW / CW / SW

PPAP MANUAL

Abstract: NSVMMBD352 NSVMMBD352WT1G
Contextual Info: MMBD352WT1G, MMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. http://onsemi.com Features •     Very Low Capacitance − Less Than 1.0 pF @ 0 V

MMBD352WT1

Contextual Info: MOTOROLA Order this document by MMBD352WT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.

onsemi 035 diode

Abstract: MMBD352WT1 MMBD352WT1G
Contextual Info: MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features http://onsemi.com • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts

Contextual Info: MMBD352W SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky B arrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A