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    MMBD355 Search Results

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    MMBD355 Price and Stock

    onsemi MMBD355LT1G

    DIODE SCHOTTKY 7V 225MW SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD355LT1G Cut Tape 4,222 1
    • 1 $0.29
    • 10 $0.179
    • 100 $0.1128
    • 1000 $0.07544
    • 10000 $0.07544
    		Buy Now
    MMBD355LT1G Digi-Reel 4,222 1
    • 1 $0.29
    • 10 $0.179
    • 100 $0.1128
    • 1000 $0.07544
    • 10000 $0.07544
    		Buy Now
    MMBD355LT1G Reel 3,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.09024
    		Buy Now
    Avnet Americas MMBD355LT1G Reel 10 Weeks 12,000
    • 1 -
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    Mouser Electronics MMBD355LT1G 3,847
    • 1 $0.24
    • 10 $0.124
    • 100 $0.077
    • 1000 $0.06
    • 10000 $0.056
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    Verical MMBD355LT1G 102,000 5,650
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    • 10000 $0.0664
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    MMBD355LT1G 57,000 5,650
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    • 10000 $0.0664
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    MMBD355LT1G 56,600 5,650
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    • 10000 $0.0664
    		Buy Now
    MMBD355LT1G 12,000 5,650
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    MMBD355LT1G 6,000 5,650
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    		Buy Now
    MMBD355LT1G 2,103 164
    • 1 -
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    • 1000 $0.0351
    • 10000 $0.0351
    		Buy Now
    Arrow Electronics MMBD355LT1G 2,103 1
    • 1 $0.036
    • 10 $0.0351
    • 100 $0.0351
    • 1000 $0.0351
    • 10000 $0.0351
    		Buy Now
    Newark MMBD355LT1G Cut Tape 6,000
    • 1 -
    • 10 -
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    • 1000 $0.074
    • 10000 $0.074
    		Buy Now
    MMBD355LT1G Reel 6,000
    • 1 -
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    • 10000 $0.083
    		Buy Now
    Onlinecomponents.com MMBD355LT1G
    • 1 -
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    • 10000 $0.0598
    		Buy Now
    Rochester Electronics MMBD355LT1G 236,600 1
    • 1 $0.0625
    • 10 $0.0625
    • 100 $0.0587
    • 1000 $0.0531
    • 10000 $0.0531
    		Buy Now
    Avnet Silica MMBD355LT1G 11 Weeks 3,000
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    EBV Elektronik MMBD355LT1G 12 Weeks 3,000
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    New Advantage Corporation MMBD355LT1G 84,000 1
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    • 10000 $0.0723
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    onsemi MMBD355LT1

    DIODE SCHOTTKY 7V 225MW SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD355LT1 Reel 9,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.07545
    		Buy Now

    MMBD355 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBD355L On Semiconductor Dual Hot Carrier Mixer Diode Original PDF
    MMBD355LT1 Leshan Radio Company Dual Hot Carrier Mixer Diodes Original PDF
    MMBD355LT1 On Semiconductor Dual Hot Carrier Mixer Diodes Original PDF
    MMBD355LT1 On Semiconductor Dual Hot Carrier Mixer Diodes Original PDF
    MMBD355LT1 ON Semiconductor RF Diodes, Discrete Semiconductor Products, DIODE SCHOTTKY DUAL CA 7V SOT-23 Original PDF
    MMBD355LT1G On Semiconductor Small Signal SOT23 Schottky, Dual Common Anode Original PDF

    MMBD355 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original     		PDF MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV

    MMBD352

    Abstract: No abstract text available
    Text: MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE 7.0 Volts POWER 250mWatts SOT-23 Unit：inch mm 0.006(0.15)MIN. FEATURES 0.120(3.04) • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF = 10mA


    Original     		PDF MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 250mWatts OT-23 OT-23 MIL-STD-750 008gramV MMBD352

    M6H MARKING sot23

    Abstract: MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD353LT3G MMBD354LT1
    Text: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236 CASE 318 2 Features


    Original     		PDF MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 OT-23 O-236) MMBD352LT1 MMBD353LT1 MMBD354LT1 M6H MARKING sot23 MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD353LT3G MMBD354LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original     		PDF MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV RB500V-40 MMBD101W

    TO-236AB

    Abstract: SOT23 marking m5g DIODE M5G
    Text: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) MMBD352LT1/D TO-236AB SOT23 marking m5g DIODE M5G

    Untitled

    Abstract: No abstract text available
    Text: MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7 Volt 250 mWatt POWER 0.006 0.15 MIN. FEATURES 0.120(3.04) 0.110(2.80) • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF = 10mA


    Original     		PDF MMBD101/MMBD352/MMBD354/MMBD355 2011/65/EU IEC61249 OT-23 MIL-STD-750 2014-REV

    MMBD352LT1

    Abstract: MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 MMBD353LT3G
    Text: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes http://onsemi.com These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236


    Original     		PDF MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 OT-23 O-236) MMBD352LT1 MMBD352LT1/D MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 MMBD353LT3G

    Untitled

    Abstract: No abstract text available
    Text: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching


    Original     		PDF MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G MMBD352LT1G MMBD352LT1/D

    M6H MARKING sot23

    Abstract: DIODE M5G MMBD355LT1G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e
    Text: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching


    Original     		PDF MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G OT-23 O-236) MMBD352LT1G MMBD352LT1/D M6H MARKING sot23 DIODE M5G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed


    Original     		PDF MMBD101W/MMBD352W/MMBD354W/MMBD355W 2002/95/EC IEC61249 OT-323, MIL-STD-750, 2012-REV

    Untitled

    Abstract: No abstract text available
    Text: MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF MMBD101/MMBD352/MMBD354/MMBD355 2002/95/EC IEC61249 OT-23, MIL-STD-750, MMBD101 MMBD352 MMBD354 MMBD355 2012-REV

    Untitled

    Abstract: No abstract text available
    Text: MMBD101W/MMBD352W/MMBD353W/MMBD354W/ MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Low V F : 0.5V (Typ) at IF=10mA .087(2.2) .078(2.0) Applications .004(.10)MIN.


    Original     		PDF MMBD101W/MMBD352W/MMBD353W/MMBD354W/ MMBD355W OT-323 OT-323, MIL-STD-750,

    MMBD352

    Abstract: MMBD101 MMBD354
    Text: MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF MMBD101/MMBD352/MMBD354/MMBD355 2002/95/EC IEC61249 OT-23, MIL-STD-750, MMBD101 MMBD352 2012-REV RB500V-40 MMBD354

    .318 SOT23

    Abstract: No abstract text available
    Text: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 OT-23 -236AB) .318 SOT23

    M6H MARKING sot23

    Abstract: MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 DIODE M5G
    Text: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) r14525 MMBD352LT1/D M6H MARKING sot23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 DIODE M5G

    MMBD352

    Abstract: MMBD101 MMBD353 MMBD354 MMBD355
    Text: MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250mWatts FEATURES • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V Typ at IF = 10mA • Extremely Fast Switching Speed


    Original     		PDF MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 250mWatts 2002/95/EC OT-23 MIL-STD-750 008gram MMBD352 MMBD353 MMBD354 MMBD355 MMBD352 MMBD101 MMBD353 MMBD354 MMBD355

    MMBD352LT1

    Abstract: MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 On semiconductor date Code sot-23
    Text: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes http://onsemi.com These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236


    Original     		PDF MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 OT-23 O-236) MMBD352LT1 MMBD352LT1/D MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 On semiconductor date Code sot-23

    diode switching

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-23 Package Weight mg 8 Product Group Type No. MMBD352 – MMBD355 BAS70 / A / C / S DAN217, DAP202, DAN202 MMBD101 MMBD717 / A / C / S BAT54 / A / C / S MMBD301 BAS40 / A / C / S


    Original     		PDF OT-23 MMBD352 MMBD355 BAS70 DAN217, DAP202, DAN202 MMBD101 MMBD717 BAT54 diode switching

    MMBD352LT1

    Abstract: MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD352L
    Text: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) r14525 MMBD352LT1/D MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD352L

    DIODE M5G

    Abstract: MMBD352LT1 MMBD352LT1G MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD354LT1 MMBD354LT1G MMBD355LT1 MMBD355LT1G
    Text: MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes http://onsemi.com These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236


    Original     		PDF MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G OT-23 O-236) MMBD352LT1 MMBD352LT1/D DIODE M5G MMBD352LT1 MMBD352LT1G MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD354LT1 MMBD354LT1G MMBD355LT1 MMBD355LT1G

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    Untitled

    Abstract: No abstract text available
    Text: Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts Typ @ I F = 10 mA


    Original     		PDF MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) MMBD352LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications


    Original     		PDF MMBD352 OT-23, MIL-STD-202,