MMBF5460 Search Results

transistor 2N5461

Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

2n5462

Abstract: 2N5460 2N5461 MMBF5460 MMBF5461
Contextual Info: M ICÜNDUCTQR tm 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 SOT-23 S Mark: 6 E / 6 1 U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high im pedance signal sources. Sourced from Process 89.

MMBF5460LT1

Contextual Info: ON Semiconductort JFET General Purpose Transistor MMBF5460LT1 P–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Forward Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic

Contextual Info: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc

Contextual Info: MMBF5460LT1 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V).75

Contextual Info: MMBF5460 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2n3819 field-effect transistors

Abstract: MPF102 MMBF-5457 bf245b
Contextual Info: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457

2N5462

Abstract: 2N5460
Contextual Info: MICDNDUCTQ R tm MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 ' S Mark: 6 E /6 1 U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

MMBF5460

Contextual Info: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF E T General Purpose T ransistor MMBF5460LT1 P-Channel 2 SOURCE 1 DRAIN M AXIM U M R ATING S Rating Symbol Value Unit V DG 40 Vdc VG SR 40 Vdc IG F 10 mAdc Symbol Max Unit Total Device Dissipation F R - 5 B o a rd O

2n5461

Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
Contextual Info: S e m i c o n d u c t o r " MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 Mark: 6E /61U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

transistor 2N5461

Abstract: 2n5462 2N5460 CONFIGURATION 2N5461 2N5461 CBVK741B019 F63TNR MMBF5460 MMBF5461 PN2222N
Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

MMBF5460LT1

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8

Contextual Info: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P−Channel 3 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB

transistor m6e

Abstract: m6e marking code MARKING JW SOT-23 MMBF5460LT1G jw sot23 marking jw MMBF5460LT1 JW SOT-23 jw sot23-3
Contextual Info: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc

2N5461

Abstract: N5460 2n5462 2N5460 SOT-23 Mark ZF SOT-23 ZF MMBF5460 MMBF5461 T092
Contextual Info: . , Discrete POWER & Signal Technologies Semiconductor'“ t ß 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W

MMBF5460LT1

Abstract: 90nF
Contextual Info: MOTOROLA Order this document by MMBF5460LT1/D SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1

Contextual Info: MMBF5460LT1* M A X IM U M RATINGS Rating Symbol Value Unit Vdc Drain-Gate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB V DG 40 V GSR 40 Vdc *GF 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc r »j a 556 °C/W TJ- Tsta - 5 5 to +150 °c Reverse Gate-Source Voltage

2N5460

Abstract: 5461 2N5461 2N5462 CBVK741B019 MMBF5460 MMBF5461 PN2222N
Contextual Info: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general

transistor equivalent 2n5551

Abstract: bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C

Contextual Info: MMBF5460LT1* M A X I M U M R A T IN G S Rating S ym bol Value U n it Vdc Drain-G ate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB vdg 40 V g SR 40 Vdc 'gf 10 m Adc S ym bol M ax U n it pd 225 mW 1.8 m W -cC R«j a 556 ’C/W T j ' Tstq - 5 5 to +150 =C

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References